Semikron SEMIX191KD16S Data Sheet
SEMiX191KD16s
SEMiX® 1s
Rectifier Diode Module
SEMiX191KD16s
Absolute Maximum Ratings
Symbol Conditions Values Unit
Recitifier Diode
=85°C
I
I
i
V
V
T
FAV
FSM
2
t
RSM
RRM
j
sin. 180°
10 ms
10 ms
T
c
T
= 100 °C
c
T
=25°C
j
T
= 130 °C
j
T
=25°C
j
T
= 130 °C
j
190 A
145 A
6000 A
5000 A
180000 A
125000 A
1700 V
1600 V
-40 ... 130 °C
2
2
Module
T
stg
V
isol
AC sinus 50Hz
1min
1s
-40 ... 125 °C
4000 V
4800 V
s
s
Features
• Terminal height 17 mm
• Chips soldered directly to isolated
substrate
Typical Applications*
• Input Bridge Rectifier for AC/DC motor
control
• Power supply
Characteristics
Symbol Conditions min. typ. max. Unit
Diode
V
V
r
I
R
F
(TO)
T
RD
th(j-c)
Tj=25°C, IF= 500 A
Tj= 130 °C
Tj= 130 °C
Tj= 130 °C, VRD = V
RRM
per diode
1.5 V
0.85 V
0.95 mΩ
12 mA
K/W
K/W
R
th(j-c)
sin. 180
per diode
0.18 K/W
K/W
Module
R
th(c-s)
per chip K/W
per module 0.075 K/W
M
s
M
t
a 5 * 9,81 m/s
to heat sink (M5) 3 5 Nm
to terminals (M6) 2.5 5 Nm
2
w145g
KD
© by SEMIKRON Rev. 38 – 25.03.2010 1
SEMiX191KD16s
Fig. 1L: Power dissipation per thyristor/diode vs.
on-state current
Fig. 1R: Power dissipation per thyristor/diode vs.
ambient temperature
Fig. 3L: Power dissipation of two modules vs. direct
current
2 Rev. 38 – 25.03.2010 © by SEMIKRON
Fig. 3R: Power dissipation of two modules vs. case
temperature
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