Semikron SEMIX171KH16S Data Sheet
SEMiX171KH16s
SEMiX® 1s
Rectifier Thyr./Diode Module
SEMiX171KH16s
Features
• Terminal height 17 mm
• Chips soldered directly to isolated
substrate
Typical Applications*
• Input Bridge Rectifier for AC/DC motor
control
• Power supply
Absolute Maximum Ratings
Symbol Conditions Values Unit
Chip
=85°C
I
T(AV)
I
TSM
2
t
i
V
RSM
V
RRM
V
DRM
(di/dt)
(dv/dt)
T
j
cr
cr
sinus 180°
10 ms
10 ms
Tj= 130 °C
Tj= 130 °C
T
c
T
= 100 °C
c
T
=25°C
j
T
= 130 °C
j
T
=25°C
j
T
= 130 °C
j
170 A
125 A
5400 A
4800 A
145000 A
115000 A
1700 V
1600 V
1600 V
200 A/µs
1000 V/µs
-40 ... 130 °C
2
s
2
s
Module
T
stg
V
isol
AC sinus 50Hz
1min
1s
-40 ... 125 °C
4000 V
4800 V
Characteristics
Symbol Conditions min. typ. max. Unit
Chip
V
T
V
T(TO)
r
T
I
DD;IRD
t
gd
t
gr
t
q
I
H
I
L
V
GT
I
GT
V
GD
I
GD
R
th(j-c)
R
th(j-c)
R
th(j-c)
Tj=25°C, IT= 500 A
Tj= 130 °C
Tj= 130 °C
Tj= 130 °C, VDD = V
DRM
; VRD = V
Tj=25°C, IG=1A, diG/dt = 1 A/µs
VD = 0.67 * V
DRM
Tj= 130 °C
Tj=25°C
Tj=25°C, RG=33Ω
Tj=25°C, d.c.
Tj=25°C, d.c.
Tj= 130 °C, d.c.
Tj= 130 °C, d.c.
per thyristor
per module
sin. 180°
per thyristor
per module
per thyristor
per module
RRM
1.6 V
0.85 V
1.5 mΩ
60 mA
1µs
2µs
150 µs
150 400 mA
300 1000 mA
2V
150 mA
0.25 V
10 mA
K/W
K/W
0.18 K/W
0.18 K/W
K/W
K/W
Module
R
th(c-s)
per chip K/W
per module 0.075 K/W
M
s
M
t
a 5 * 9,81 m/s
to heat sink (M5) 3 5 Nm
to terminals (M6) 2.5 5 Nm
2
w145g
KH
© by SEMIKRON Rev. 2 – 25.03.2010 1
SEMiX171KH16s
Fig. 1L: Power dissipation per thyristor/diode vs.
on-state current
Fig. 2L: Power dissipation of one module vs. rms current
Fig. 1R: Power dissipation per thyristor/diode vs.
ambient temperature
Fig. 2R: Power dissipation of one module vs. case
temperature
Fig. 3L: Power dissipation of two modules vs. direct
current
2 Rev. 2 – 25.03.2010 © by SEMIKRON
Fig. 3R: Power dissipation of two modules vs. case
temperature
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