Semikron SEMIX151GD12E4S Data Sheet

SEMiX151GD12E4s

SEMiX® 13

Trench IGBT Modules

SEMiX151GD12E4s

Features

• Homogeneous Si

• Trench = Trenchgate technology

•V

• High short circuit capability

• UL recognized, file no. E63532

Typical Applications*

• AC inverter drives

•UPS

• Electronic Welding

Remarks

• Case temperature limited to TC=125°C

• Product reliability results are valid for

with positive temperature

CE(sat)

coefficient

max.

T

=150°C

j

Absolute Maximum Ratings
Symbol Conditions Values Unit

IGBT

V
I

C

I

Cnom

I

CRM

V

CES

GES

Tj= 175 °C

I

= 3xI

CRM

Cnom

T

=25°C

c

T

=80°C

c

1200 V

232 A
179 A
150 A
450 A

-20 ... 20 V

VCC= 800 V
V

t

psc

T

j

GE

V

CES

≤ 20 V

≤ 1200 V

= 150 °C

T

j

10 µs

-40 ... 175 °C

Inverse diode

T

I

F

I

Fnom

I

FRM

I

FSM

T

Tj= 175 °C

I

= 3xI

FRM

Fnom

tp= 10 ms, sin 180°, Tj=25°C

j

=25°C

c

T

=80°C

c

189 A
141 A
150 A
450 A
900 A

-40 ... 175 °C

Module

I

t(RMS)

T

stg

V

isol

AC sinus 50Hz, t = 1 min 4000 V

600 A

-40 ... 125 °C

Characteristics
Symbol Conditions min. typ. max. Unit

IGBT

V

CE(sat)

V

CE0

r

CE

V

GE(th)

I

CES

C

ies

C

oes

C

res

Q
R

Gint

t

d(on)

t

r

E

on

t

d(off)

t

f

E

off

R

th(j-c)

IC=150A
V

=15V

GE

chiplevel

VGE=15V

VGE=VCE, IC=6mA 5 5.8 6.5 V

VGE=0V
V

= 1200 V

CE

VCE=25V
V

=0V

GE

G

VGE=- 8 V...+ 15 V
Tj=25°C

VCC= 600 V
I

=150A

C

=1Ω

R

G on

R

=1Ω

G off

di/dt

= 3900 A/µs

on

di/dt

= 2000 A/µs

off

per IGBT 0.19 K/W

T

=25°C

j

= 150 °C

T

j

Tj=25°C
T

= 150 °C

j

T

=25°C

j

T

= 150 °C

j

T

=25°C

j

T

= 150 °C

j

f=1MHz
f=1MHz
f=1MHz

T

= 150 °C

j

Tj= 150 °C
Tj= 150 °C
Tj= 150 °C
Tj= 150 °C

Tj= 150 °C

1.8 2.05 V

2.2 2.4 V

0.8 0.9 V

0.7 0.8 V

6.7 7.7 mΩ

10.0 10.7 mΩ

0.1 0.3 mA
mA

9.3 nF

0.58 nF

0.51 nF
850 nC

5.00 Ω
209 ns

39 ns

14.1 mJ
483 ns

82 ns

19.2 mJ

GD

© by SEMIKRON Rev. 0 – 05.05.2010 1

SEMiX151GD12E4s

SEMiX® 13

Trench IGBT Modules

SEMiX151GD12E4s

Features

• Homogeneous Si

• Trench = Trenchgate technology

•V

• High short circuit capability

• UL recognized, file no. E63532

Typical Applications*

• AC inverter drives

•UPS

• Electronic Welding

with positive temperature

CE(sat)

coefficient

Characteristics
Symbol Conditions min. typ. max. Unit

Inverse diode

V

V

r

F

I

RRM

Q

E

R

= V

F

F0

rr

rr

th(j-c)

IF=150A

EC

V

=0V

GE

chip

IF=150A
di/dt

= 3400 A/µs

off

V

=-15V

GE

V

= 600 V

CC

per diode 0.31 K/W

T

=25°C

j

= 150 °C

T

j

Tj=25°C
T

= 150 °C

j

Tj=25°C
T

= 150 °C

j

T

= 150 °C

j

Tj= 150 °C

Tj= 150 °C

2.1 2.46 V

2.1 2.4 V

1.1 1.3 1.5 V

0.7 0.9 1.1 V

4.3 5.6 6.4 mΩ

6.7 7.8 8.5 mΩ
185 A

23 µC

8.9 mJ

Module

L

CE

R

CC'+EE'

R

th(c-s)

M

s

M

t

=25°C

T

res., terminal-chip

C

T

= 125 °C

C

per module 0.04 K/W
to heat sink (M5) 3 5 Nm

to terminals (M6)

2.5 5 Nm

20 nH

0.7 mΩ
1mΩ

Nm

w 350 g

Temperatur Sensor

R

100

B

100/125

Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
R

T[K];

(T)=R100

exp[B

100/125

(1/T-1/T

100

)];

3550

±2%

K

Remarks

• Case temperature limited to TC=125°C
max.

• Product reliability results are valid for
T

=150°C

j

GD

2 Rev. 0 – 05.05.2010 © by SEMIKRON