Semikron SEMIX151GB12E4S Data Sheet
SEMiX151GB12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GB12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
• Product reliability results are valid for
with positive temperature
CE(sat)
coefficient
max.
T
=150°C
j
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 175 °C
I
= 3xI
CRM
Cnom
T
=25°C
c
T
=80°C
c
1200 V
232 A
179 A
150 A
450 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 20 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
189 A
141 A
150 A
450 A
900 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
terminal
=80°C
600 A
-40 ... 125 °C
AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
IC=150A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=6mA 5 5.8 6.5 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
VCC= 600 V
I
=150A
C
V
=±15V
GE
R
=1
G on
R
=1
G off
di/dt
= 3900 A/µs
on
di/dt
=2000A/µs
off
per IGBT 0.19 K/W
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.8 2.05 V
2.2 2.4 V
0.8 0.9 V
0.7 0.8 V
6.7 7.7 m
10.0 10.7 m
2.0 mA
mA
9.3 nF
0.58 nF
0.51 nF
850 nC
5.00
204 ns
42 ns
16.6 mJ
468 ns
91 ns
18.4 mJ
GB
© by SEMIKRON Rev. 3 – 03.07.2013 1
SEMiX151GB12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GB12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
with positive temperature
CE(sat)
coefficient
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF= 150 A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 150 A
di/dt
=3400A/µs
off
V
=-15V
GE
V
= 600 V
CC
per diode 0.31 K/W
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.1 2.46 V
2.1 2.4 V
1.1 1.3 1.5 V
0.7 0.9 1.1 V
4.3 5.6 6.4 m
6.7 7.8 8.5 m
115 A
23 µC
8.9 mJ
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
=25°C
T
res., terminal-chip
C
T
=125°C
C
per module 0.075 K/W
to heat sink (M5) 3 5 Nm
to terminals (M6)
2.5 5 Nm
16 nH
0.7 m
1m
Nm
w 145 g
Temperature Sensor
R
100
B
100/125
Tc=100°C (R25=5 k) 493 ± 5%
R
(T)=R100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
3550
±2%
K
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
T
=150°C
j
GB
2 Rev. 3 – 03.07.2013 © by SEMIKRON
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