Semikron SEMIX101GD126HDS Data Sheet

SEMiX101GD126HDs

SEMiX® 13

Trench IGBT Modules

SEMiX101GD126HDs

Features

• Homogeneous Si

• Trench = Trenchgate technology

•V

• High short circuit capability

• UL recognised file no. E63532

Typical Applications*

• AC inverter drives

•UPS

• Electronic Welding

Remarks

• Case temperatur limited to TC=125°C

• Not for new design

with positive temperature

CE(sat)

coefficient

max.

Absolute Maximum Ratings
Symbol Conditions Values Unit

IGBT

V
I

C

I

Cnom

I

CRM

V

CES

GES

Tj= 150 °C

I

= 2xI

CRM

Cnom

T

=25°C

c

T

=80°C

c

1200 V

129 A

91 A
75 A

150 A

-20 ... 20 V

VCC= 600 V
V

t

psc

T

j

GE

V

CES

≤ 20 V

≤ 1200 V

= 125 °C

T

j

10 µs

-40 ... 150 °C

Inverse diode

T

I

F

I

Fnom

I

FRM

I

FSM

T

Tj= 150 °C

I

= 2xI

FRM

Fnom

tp= 10 ms, sin 180°, Tj=25°C

j

=25°C

c

T

=80°C

c

117 A

81 A

75 A
150 A
600 A

-40 ... 150 °C

Module

I

t(RMS)

T

stg

V

isol

AC sinus 50Hz, t = 1 min 4000 V

600 A

-40 ... 125 °C

Characteristics
Symbol Conditions min. typ. max. Unit

IGBT

V

CE(sat)

V

CE0

r

CE

V

GE(th)

I

CES

C

ies

C

oes

C

res

Q
R

Gint

t

d(on)

t

r

E

on

t

d(off)

t

f

E

off

R

th(j-c)

IC=75A
V

=15V

GE

chiplevel

VGE=15V

VGE=VCE, IC=3mA 5 5.8 6.5 V

VGE=0V
V

= 1200 V

CE

VCE=25V
V

=0V

GE

G

VGE=- 8 V...+ 15 V
Tj=25°C

VCC= 600 V
I

=75A

C

=2Ω

R

G on

R

=2Ω

G off

per IGBT 0.27 K/W

T

=25°C

j

= 125 °C

T

j

Tj=25°C
T

= 125 °C

j

T

=25°C

j

T

= 125 °C

j

T

=25°C

j

T

= 125 °C

j

f=1MHz
f=1MHz
f=1MHz

T

= 125 °C

j

Tj= 125 °C
Tj= 125 °C
Tj= 125 °C
Tj= 125 °C

Tj= 125 °C

1.7 2.1 V

22.45V

11.2V

0.9 1.1 V

9.3 12.0 mΩ

14.7 18.0 mΩ

0.1 0.3 mA
mA

5.3 nF

0.28 nF

0.24 nF
600 nC

10.00 Ω
225 ns

40 ns
10 mJ

470 ns

85 ns

11 mJ

GD

© by SEMIKRON Rev. 0 – 16.04.2010 1

SEMiX101GD126HDs

SEMiX® 13

Trench IGBT Modules

SEMiX101GD126HDs

Features

• Homogeneous Si

• Trench = Trenchgate technology

•V

• High short circuit capability

• UL recognised file no. E63532

Typical Applications*

• AC inverter drives

•UPS

• Electronic Welding

with positive temperature

CE(sat)

coefficient

Characteristics
Symbol Conditions min. typ. max. Unit

Inverse diode

V

V

r

F

I

RRM

Q

E

R

= V

F

F0

rr

rr

th(j-c)

IF=75A

EC

V

=0V

GE

chip

IF=75A
di/dt

= 2240 A/µs

off

V

=-15V

GE

V

= 600 V

CC

per diode 0.46 K/W

T

=25°C

j

= 125 °C

T

j

Tj=25°C
T

= 125 °C

j

Tj=25°C
T

= 125 °C

j

T

= 125 °C

j

Tj= 125 °C

Tj= 125 °C

1.6 1.80 V

1.6 1.8 V

0.9 1 1.1 V

0.7 0.8 0.9 V

6.7 8.0 9.3 mΩ

9.3 10.7 12.0 mΩ
97 A
20 µC

9mJ

Module

L

CE

R

CC'+EE'

R

th(c-s)

M

s

M

t

=25°C

T

res., terminal-chip

C

T

= 125 °C

C

per module 0.04 K/W
to heat sink (M5) 3 5 Nm

to terminals (M6)

2.5 5 Nm

20 nH

0.7 mΩ
1mΩ

Nm

w 350 g

Temperatur Sensor

R

100

B

100/125

Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
R

T[K];

(T)=R100

exp[B

100/125

(1/T-1/T

100

)];

3550

±2%

K

Remarks

• Case temperatur limited to TC=125°C
max.

• Not for new design

GD

2 Rev. 0 – 16.04.2010 © by SEMIKRON