SEMICOA 2N918 Datasheet
Data Sheet No. 2N918
Type 2N918
Geometry 0013
Polarity NPN
Qual Level: JAN - JANTXV
Features:
• General-purpose low-power NPN
silicon transistor.
• Housed in TO-72 case.
• Also available in chip form using
the 0013 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/301 which
Semicoa meets in all cases.
Maximum Ratings
Generic Part Number:
2N918
REF: MIL-PRF-19500/301
TO-72
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter voltage
Collector-Base Voltage
Emitter-Base voltage
Collector Current, Continuous
Power Dissipation, T
Derate above 25
Power Dissipation, T
Derate above 25
= 25oC
A
o
C
= 25oC
A
o
C
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
J
T
STG
15 V
30 V
3.0 V
50 mA
200 mW
1.14
300 mW
1.71
-65 to +200
-65 to +200
mW/oC
mW/oC
o
C
o
C
Data Sheet No. 2N918
OFF Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Small Signal Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 1.0 µA
Collector-Emitter Breakdown Voltage
IC = 3.0 mA
Emitter-Base Breakdown Voltage
IC = 10 µA
Collector-Base Cutoff Current
VCB = 25 V
Collector-Base Cutoff Current
VCB = 25 V, TA = 150oC
Emitter-Base Cutoff Current
VEB = 2.5 V
IC = 500 µA, V
= 10 V h
CE
IC = 3.0 mA, VCE = 1.0 V h
IC = 10 mA, VCE = 10 V h
IC = 3.0 mA, V
= 1.0 V, TC = -55oC h
CE
IC = 10 mA, IB = 1.0 mA V
V
(BR)CBO
V
(BR)CEO
V
(BR)CEO
I
CBO1
I
CBO2
I
EBO
FE1
FE2
FE3
FE4
BE(sat)
30 --- V
15 --- V
3.0 ---
V
3.0 10 nA
--- 1 µA
--- 10 nA
10 --- --20 200 --20 --- ---
10 --- ---
--- 1.0 V dc
IC = 10 mA, IB = 1.0 mA V
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 10 V, IC = 4.0 mA, f = 100 MHz
Noise Figure
VCE = 6 V, IC = 1.0 mA, f = 60 MHz
Small Signal Power Gain
VCB = 12 V, IC = 6.0 mA, f = 200 MHz
Collector - Base Time Constant
VCB = 10 V, IE = -4.0 mA, f = 79.8 MHz
Oscillator Power Output
VCB = 15 V, IC = 8.0 mA, f > 500 MHz
Collector Efficiency
VCB = 15 V, IC = 8.0 mA, f > 500 MHz
Open Circuit Output Capacitance
VCB = 0 V, IE = 0, 100 kHz < f < 1 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
CE(sat)
|hFE|
--- 0.4 V dc
6.0 18 ---
NF --- 6.0
G
rb'C
p
PE
c
o
15 --- dB
--- 25 ps
--- 30 mW
n --- 25 ---
C
C
OBO1
OBO2
C
IBO
--- 3.0 pF
--- 1.7 pF
--- 2.0 pF
dB
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