SEMICOA 2N5237 Datasheet

Data Sheet No. 2N5237

Type 2N5237

Geometry 3111
Polarity NPN
Qual Level: JAN - JANTXV

Features:

• Silicon power transistor for use in
high speed switching applications.

• Housed in a TO-39 case.

• Also available in chip form using

the 3111 chip geometry.

• The Min and Max limits shown are
per MIL-PRF-19500/394 which
Semicoa meets in all cases.

Maximum Ratings

Generic Part Number:
2N5237

REF: MIL-PRF-19500/394

TO-39

TC = 25oC unless otherwise specified

Rating Symbol Rating Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous
Power Disipation T

Derate above 25
Power Disipation T

Derate above 25

= 25oC ambient 1.0 mW

A

o

C

= 25oC ambient 5.0 Watt

A

o

C

Thermal Impedance

Operating Junction Temperature

V

CEO

V

CBO

V

EBO

I

C

P

T

P

T

R

JC

R

JA

T

J

120 V

150 V

10 V

10 A

5.7

50

0.020

0.175

-65 to +200

mW/

mW/

o

C/mW

o

C/mW

o

C

o

C

o

C

Storage Temperature

T

STG

-65 to +200

o

C

Data Sheet No. 2N5237

OFF Characteristics

Symbol

Min

Max

Unit

Collector-Base Breakdown Voltage

IC = 10 µA

Collector-Emitter Breakdown Voltage

IC = 0.1 A, pulsed

Emitter-Base Breakdown Voltage

IE = 10 µA

Electrical Characteristics

ON Characteristics

Symbol

Min

Max

Unit

Forward Current Transfer Ratio

IC = 1 A, V

= 5 V, pulsed

h

50

225

---

IC = 5 A, V

= 5 V, pulsed

h

40

120

---

IC = 10 A, V

= 5 V

h

10

---

---

IC = 5 A, V

= 5 V, T

= -55

o

C

h

20

---

---

Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Small Signal Characteristics

Symbol

Min

Max

Unit

Switching Time

Symbol

Min

Max

Unit

TC = 25oC unless otherwise specified

Collector-Emitter Cutoff Current

VCE = 110 V I
VBE = 0.5 V, VCE = 150 V I
VBE = -0.5 V, VCE = 150 V, TC = +150oC I

Base-Emitter Cutoff Current

VEB = 5 V

Collector-Base Cutoff Current

VCB = 80 V

CE
CE

CE

CE

C

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CEO1

CEX

CEX2

I

EBO

I

CBO

FE1
FE2
FE3
FE4

150 --­120 V

7.0 --- V

--- 10

--- 10

--- 100

µA
µA
µA

--- 0.1 µA

--- 0.1 µA

V

IC = 5 A, IB = 0.5 A, pulsed V
IC = 10 A, IB = 1 A, pulsed V

IC = 5 A, IB = 0.5 A, pulsed V
IC = 10 A, IB = 1 A, pulsed V

Safe Operating Area, Continuous DC

TC = 25oC, t = 1.0 s

Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio

VCE = 10 V, IC = 0.2 A, f = 10 MHz

Small Signal, Short Circuit
Forward Current Transfer Ratio

VCE = 10 V, IC = 50 mA, f = 1 kHz

Open Circuit Output Capacitance

VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz

Delay Time

Per figure 4, MIL-PRF-19500/394C

Rise Time

Per figure 4, MIL-PRF-19500/394C

Storage Time

Per figure 4, MIL-PRF-19500/394C

Fall Time

Per figure 4, MIL-PRF-19500/394C

BE(sat)1
BE(sat)2

CE(sat)1
CE(sat)2

|hfe|

h

fe

C

OBO

t

d

t

r

t

s

t

f

--- 1.5 V dc

--- 2.5 V dc

--- 0.6 V dc

--- 2.5 V dc
VCE = 40 V, IC = 0.22 A
VCE = 70 V, IC = 90 mA

1.5 7.5

40 160 ---

--- 350 pF

--- 50

--- 500 ns

---

1.5 ns

--- 50 ns

---

ns