SEMICOA 2N4957UB Datasheet
Data Sheet No. 2N4957UB
Type 2N4957UB
Geometry 0006
Polarity PNP
Qual Level: JAN - JANTXV
Features:
• Small signal RF silicon transistor
designed for high-gain, low-noise
applications.
• Housed in a cersot case.
• Also available in chip form using
the 0006 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/426 which
Semicoa meets in all cases.
Generic Part Number:
2N4957UB
REF: MIL-PRF-19500/426
Cersot
Maximum Ratings
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
30 V
30 V
3.0 V
30 A
-65 to +200
-65 to +200
o
C
o
C
Data Sheet No. 2N4957UB
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 100 µA, I
= 0
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, I
= 0
Emitter-Base Breakdown Voltage
IE = 100 µA, I
= 0
Collector-Base Cutoff Current
V
= 20 V, I
0, T
= +25
o
C
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
DC Current Gain
IC = 0.5 mA, V
= 10 V
h
15
---
---
IC = 2.0 mA, V
= 10 V
h
20
---
---
IC = 5.0 mA, V
= 10 V
h
30
165
---
IC = 5.0 mA, V
= 10 V, T
= -55
o
C
h
10
---
---
Small Signal Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
E
B
C
CB
E
C
Collector-Base Cutoff Current
V
= 20 V, IE 0, TC = +150oC
CB
CE
CE
CE
CE
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO1
I
CBO2
FE1
FE2
FE3
A
FE4
30 --30
---
3.0 --- V
--- 100 na
---
100 µA
V
V
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 10 V, IE = 2.0 mA, f = 100 MHz
Collector to Base Feedback Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Collector to Base Time Constant
VCB = 10 V, IE = 2.0 mA, f = 63.6 MHz
Common Emitter Small Signal Power Gain
VCE = 10 V, IC = 2.0 mA, f = 450 MHz
|hfe|
C
rb'C
G
cb
PE
12 36
--- 0.8
C
1.0 8.0 ps
---
pF
17 25 dB
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