SEMICOA 2N4261 Datasheet
Data Sheet No. 2N4261
Maximum Ratings
Type 2N4261
Geometry 0014
Polarity PNP
Qual Level: JAN - JANS
Features:
• Fast switching small signal silicon
transistor.
• Housed in a TO-72 case.
• Also available in chip form using
the 0014 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/511 which
Semicoa meets in all cases.
• Radiation graphs available.
Generic Part Number:
2N4261
REF: MIL-PRF-19500/511
TO-72
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
15 V
15 V
4.5 V
30 mA
-65 to +200
-65 to +200
o
C
o
C
Data Sheet No. 2N4261
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Collector-Emitter Cutoff Current
VCE = 10 V, V
= 0.4 V
I
CEX1
---50nA
VCE = 10 V, V
= 2.0 V
I
CEX2
---
5.0
nA
VCE = 10 V, V
= 2.0 V, T
= +150
o
C
I
CEX3
---
5.0
µA
Base Cutoff Current
VCE = 10 V, V
= 2.0 V
Emitter-Base Cutoff Current
V
= 4.5 V
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
Forward current Transfer Ratio
IC = 1.0 mA, V
= 1.0 V
h
25
---
---
IC = 10 mA, V
= 1.0 V, pulsed
h
30
150
---
IC = 30 mA, V
= 1.0 V pulsed
h
20
---
---
IC = 10 mA, V
= 1.0 V, T
= -55
o
C
h
15
---
---
Collector-Emitter Saturation Voltage
IC = 1.0 mA, I
= 0.1 mA
V
---
0.15
V dc
IC = 10 mA, I
= 1.0 mA
V
---
0.35
V dc
Base-Emitter Saturation Voltage
V
= 1.0 V, I
= 1.0 mA
V
---
0.8
V dc
V
= 1.0 V, I
= 10 mA
V
---
1.0
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Switching Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
Emitter-Base Breakdown Voltage
EB
EB
EB
EB
EB
CE
CE
CE
CE
B
B
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
A
I
BEX
I
EBO
FE1
FE2
FE3
A
FE4
CE(sat)1
CE(sat)2
15 --15 ---
4.5 ---
--- 5.0
--- 10
V
V
V
nA
µA
CE
CE
C
C
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 4.0 V, IC = 5.0 mA, f = 100 MHz
VCE = 10 V, IC = 10 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 4.0 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Collector-Base Time Constant
VCE = 4.0 V, IC = 5.0 mA, f = 31.8 MHz
Collector-Base Time Constant
VCE = 4.0 V, IC = 10 mA, f = 31.8 MHz
Saturated Turn On Switching Time to 90%
V
= 17 V, 50 ohm pulse generator
CC
Saturated Turn Off Switching Time to 10%
V
= 17 V, 50 ohm pulse generator
CC
BE1
BE2
|h
|h
C
OBO
C
r'b'C
r'b'C
t
ON
t
OFF
fe1
fe2
IBO
C1
C2
|
|
15 --- --20 --- ---
--- 2.5
pF
--- 2.5 pF
--- 60
ps
--- 50 ps
--- 2.5 ns
--- 3.5 ns
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