SEMICOA 2N4150S Datasheet
Data Sheet No. 2N4150S
o
o
Maximum Ratings
Type 2N4150S
Geometry 9201
Polarity NPN
Qual Level: JAN - JANTXV
Features:
• Power switching transistor for high
speed switching applicatons.
• Housed in a TO-39 case.
• Also available in chip form using
the 9201 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/394 which
Semicoa meets in all cases.
Generic Part Number:
2N4150S
REF: MIL-PRF-19500/394
TO-39
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation at 25oC ambient
Derate above 25oC
Power Dissipation at 25oC ambient
Derate above 25oC
Thermal Impedance
Operating Junction Temperature
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
R
JC
R
JA
T
J
70 V
100 V
10 V
10 A
1.0 mW
5.7
5.0 W
50
0.020
0.175
-65 to +200
mW/oC
mW/oC
C/mW
C/mW
o
C
Storage Temperature
T
STG
-65 to +200
o
C
Data Sheet No. 2N4150S
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 0.1 A, pulsed
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Emitter Cutoff Current
VCE = 60 V
I
CEO1
---10 µA
V
= 0.5 V, V
= 100 V
I
CEX
---10 µA
V
= -0.5 V, V
= 80 V, T
= +150
o
C
I
CEX2
100
µA
Emitter-Base Cutoff Current
V
= 5V
Collector-Base Cutoff Current
V
= 80 V
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
Forward current Transfer Ratio
IC = 1 A, V
= 5 V, pulsed
h
50
200
---
IC = 5 A, V
= 5.0 V, pulsed
h
40
120
---
IC = 10 A, V
= 5 V
h
10
---
---
IC = 5 A, V
= 5.0 V, T
= -55
o
C
h
20
---
---
Collector-Emitter Saturation Voltage
IC = 5 A, I
= 0.5 A pulsed
V
---
0.6
V dc
IC = 10 A, I
= 1 A, pulsed
V
---
2.5
V dc
Base-Emitter Saturation Voltage
IC = 5 A, I
= 0.5 A, pulsed
V
---
1.5
V dc
IC = 10 A, I
= 1 A, pulsed
V
---
2.5
V dc
Safe Operating Area, Continuous DC
VCE = 40 V, I
= 0.22 A
VCE = 70 V, I
= 90 mA
Small Signal Characteristics
Symbol
Min
Max
Unit
Switching Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
BE
BE
EB
CB
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CE
CE
CE
CE
CE
CE
B
B
C
I
EBO
I
CBO
FE1
FE2
FE3
C
FE4
CE(sat)1
CE(sat)2
100 ---
70 ---
7.0 ---
--- 0.1
--- 0.1 µA
V
V
V
µA
B
B
TC = 25oC, t = 1.0 s
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 10 V, IC = 0.2 A, f = 10 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Small Signal, Short Circuit, Forward Current
VCE = 10 V, IC = 50 mA, f = 1 kHz
Delay Time
Per Figure 4, MIL-PRF-19500/394C
Rise Time
Per Figure 4, MIL-PRF-19500/394C
Storage Time
Per Figure 4, MIL-PRF-19500/394C
Fall Time
Per Figure 4, MIL-PRF-19500/394C
BE(sat)1
BE(sat)2
|hfe|
C
OBO
h
fe
t
d
t
r
t
s
t
f
C
C
1.5 7.5
--- 350
pF
40 160 ---
--- 50
ns
--- 500 ns
--- 1.5 ns
--- 50 ns
---
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