SEMICOA 2N4033 Datasheet
Data Sheet No. 2N4033
Type 2N4033
Geometry 6700
Polarity PNP
Qual Level: JAN - JANTXV
Features:
• General-purpose transistor for
high speed switching and driver
applicatons.
• Housed in a TO-39 case.
• Also available in chip form using
the 6700 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/512 which
Semicoa meets in all cases.
Generic Part Number:
2N4033
REF: MIL-PRF-19500/512
TO-39
Maximum Ratings
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
o
Power Dissipation at 25
Derate above 25
Operating Junction Temperature
Storage Temperature
o
C ambient
C
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
T
STG
80 V
80 V
5.0 V
1.0 mA
0.8 Watt
4.56
-55 to +200
-55 to +200
mW/oC
o
C
o
C
Data Sheet No. 2N4033
OFF Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
Forward current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small Signal Characteristics
Symbol
Min
Max
Unit
Switching Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 10 µA, pulsed
Collector-Emitter Breakdown Voltage
IC = 10 mA, pulsed
Emitter-Base Breakdown Voltage
IC = 10 µA, pulsed
Collector-Base Cutoff Current
VCB = 60 V
VCB = 60 V, TA = +150oC
Collector-Emitter Cutoff Current
VCE = 60 V, VBE = 2.0 V
Base-Emitter Cutoff Current
VBE = 3 V
IC = 100 µA, V
= 5 V h
CE
IC = 100 mA, VCE = 5.0 V (pulse test) h
IC = 500 mA, VCE = 5 V (pulse test) h
IC = 1.0 A, VCE = 5 V (pulse test) h
IC = 500 mA, VCE = 5.0 V (pulse test), TA = -55oC h
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO1
I
CBO2
I
CEX1
I
EBO
FE1
FE2
FE3
FE4
FE5
80 ---
80 ---
5.0 ---
--- 10 nA
--- 25 µA
--- 25
nA
--- 25 nA
50 --- ---
100 300 ---
70 --- --25 --- ---
30 --- ---
V
V
V
IC = 150 mA, IB = 15 mA (pulse test) V
IC = 500 mA, IB = 50 mA (pulse test) V
IC = 1.0 A, IB = 100 mA (pulse test) V
IC = 150 mA, IB = 15 mA (pulse test) V
IC = 500 mA, IB = 50 mA (pulse test) V
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 10 V, IC = 50 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Delay Time
IC = 500 mA, I
= 50 mA
B1
Rise Time
IC = 500 mA, I
= 50 mA
B1
Storage Time
IC = 500 mA, I
B1
= I
= 50 mA
B2
Fall Time
IC = 500 mA, I
B1
= I
= 50 mA
B2
CE(sat)1
CE(sat)2
CE(sat)3
BE(sat)1
BE(sat)2
|hfe|
C
OBO
C
IBO
t
d
t
r
t
s
t
f
--- 0.15 V dc
--- 0.5 V dc
--- 1.0 V dc
--- 0.9 V dc
--- 1.2 V dc
1.5 6.0
--- 20
---
pF
--- 80 pF
--- 15
ns
--- 25 ns
--- 175 ns
--- 35 ns
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