SEMICOA 2N3866A Datasheet
Data Sheet No. 2N3866A
Maximum Ratings
Type 2N3866A
Geometry 1007
Polarity NPN
Qual Level: JAN - JANS
Features:
• General-purpose silicon transistor
for switching and amplifier applications.
• Housed in TO-39 case.
• Also available in chip form using
the 1007 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/398 which
Semicoa meets in all cases.
Generic Part Number:
2N3866A
REF: MIL-PRF-19500/398
TO-39
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
30 V
60 V
3.5 V
0.4 A
-55 to +175
-55 to +175
o
C
o
C
Data Sheet No. 2N3866A
OFF Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Power Output
Power Output
Collector Efficiency
Collector Efficiency
Small Signal Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 100 µA, pulsed
Collector-Emitter Breakdown Voltage
IC = 5 mA, pulsed
Collector-Emitter Breakdown Voltage
IC = 40 mA, VBE = -5V, clamped
Emitter-Base Breakdown Voltage
IE = 100 µA, pulsed
Collector-Emitter Cutoff Current
VCE = 55 V
Collector-Emitter Cutoff Current
VCE = 55 V, TA = +150oC
Collector-Emitter Cutoff Current
VCE = 28 V
IC = 50 mA, V
IC = 360 mA, V
IC = 50 mA, V
= 5.0 V (pulsed) h
CE
= 5.0 V (pulsed) h
CE
= 5.0 V (pulsed), TA = -55oC
CE
V
(BR)CBO
V
(BR)CEO
V
(BR)CEC
V
(BR)EBO
I
CES
I
CES2
I
CEO
h
FE1
FE2
FE3
60 --- V
30 --- V
55 --- ---
3.5 ---
--- 100 µA
--- 2.0 mA
--- 20 µA
25 200 ---
8.0 --- --12 --- ---
V
IC = 100 mA, IB = 10 mA (pulsed) V
VCC = 28 V, P
VCC = 28 V, P
VCC = 28 V, P
VCC = 28 V, P
Magnitude of Common Emitter, Small Signal, Short Circuit
= 0.15 W, f = 400 MHz P
IN
= 0.075 W, f = 400 MHz P
IN
= 0.15 W, f = 400 MHz n
IN
= 0.075 W, f = 400 MHz n
IN
Current Transfer Ratio
IC = 50 mA, V
= 15 V, f = 200
CE
Open Circuit Output Capacitance
VCB = 28 V, IE = 0
CE(sat)
1out
2out
|hFE|
C
OBO
--- 1.0 V dc
1.0 2.0 W
0.5 --- W
1
2
45 --- %
40 --- %
4.0 7.5 ---
--- 3.5
pF
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