SEMICOA 2N3860 Datasheet
Data Sheet No. 2N3960
Maximum Ratings
Type 2N3960
Geometry 0003
Polarity NPN
Qual Level: JAN - JANTXV
Features:
• General-purpose low-power NPN
silicon transistor.
• Housed in TO-18 case.
• Also available in chip form using
the 0003 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/399 which
Semicoa meets in all cases.
Generic Part Number:
2N3960
REF: MIL-PRF-19500/399
TO-18
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation, TA = 25oC
Derate above 25oC
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
P
T
T
J
T
STG
12 V
20 V
4.5 V
400 mW
2.3
-65 to +200
-65 to +200
mW/oC
o
C
o
C
Data Sheet No. 2N3960
OFF Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Small Signal Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Cutoff Current
VCE = 10 V, VBE = 0.4 V
VCE = 10 V, VEB = 2.0 V
VCE = 10 V, VEB = 2.0 V, TA = 150oC
IC = 1.0 mA, V
= 1 V h
CE
IC = 10 mA, VCE = 1 V, pulsed h
IC = 30 mA, VCE = 1 V, pulsed h
IC = 10 mA, VCE = 1.0 V, TC = -55oC h
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX1
I
CEX2
I
CEX3
FE1
FE2
FE3
FE4
20 --- V
12 --- V
4.5 ---
--- 1.0 µA
---
5.0 nA
--- 5.0 µA
40 --- --60 300 --30 --- ---
30 ---
V
VCE 1.0 V, IC = 1.0 mA V
VCE 1.0 V, IC = 30 mA V
IC = 1.0 mA, IB = 0.1 mA V
IC = 30 mA, IB = 3.0 mA V
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 4 V, IC = 5.0 mA, f = 100 MHz
VCE = 4 V, IC = 10 mA, f = 100 MHz
VCE = 4 V, IC = 30 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 4 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
= 0.5 V, IC = 0, 100 kHz < f < 1 MHz
EB
BE1
BE2
CE(sat)1
CE(sat)2
|h
FE1
|h
FE2
|h
FE3
C
OBO
C
IBO
--- 0.8 V dc
--- 1.0 V dc
--- 0.2 V dc
--- 0.3 V dc
|
|
|
13 --- --14 --- --12 --- ---
--- 2.5 pF
--- 2.5 pF
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