SEMICOA 2N3764 Datasheet
Data Sheet No. 2N3764
Type 2N3764
Geometry 6706
Polarity PNP
Qual Level: JAN - JANTXV
Features:
• General-purpose transistor for
switching and amplifier applicatons.
• Housed in a TO-46 case.
• Also available in chip form using
the 6706 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/396 which
Semicoa meets in all cases.
Generic Part Number:
REF: MIL-PRF-19500/396
TO-46
Maximum Ratings
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
40 V
40 V
5.0 V
1.5 mA
-55 to +200
-55 to +200
o
C
o
C
Data Sheet No. 2N3764
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Emitter Cutoff Current
VEB = 2.0 V, V
= 20 V
Collector-Emitter Cutoff Current
VEB = 2.0 V, V
= 20 V, T
= 150
o
C
Collector-Base Cutoff Current
VCB = 20 V
Emitter-Base Cutoff Current
VEB = 2.0 V
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
Forward current Transfer Ratio
IC = 10 mA, V
= 1.0 V
h
35
---
---
IC = 150 mA, V
= 1.0 V (pulse test)
h
40
---
---
IC = 500 mA, V
= 1.0 V (pulse test)
h
40
140
---
IC = 1.0 A, V
= 1.5 V (pulse test)
h
30
120
---
IC = 1.5 A, V
= 5.0 V (pulse test)
h
30
---
---
IC = 500 mA, V
= 1.0 V (pulsed), T
= -55
o
C
h
20
---
---
Collector-Emitter Saturation Voltage
IC = 10 mA, I
= 1 mA (pulse test)
V
---
0.1
V dc
IC = 150 mA, I
= 15 mA (pulse test)
V
---
0.22
V dc
IC = 500 mA, I
= 50 mA (pulse test)
V
---
0.50
V dc
IC = 1.0 A, I
= 100 mA (pulse test)
V
---
0.90
V dc
Base-Emitter Saturation Voltage
IC = 10 mA, I
= 1 mA
V
---
0.8
V dc
IC = 150 mA, I
= 15 mA (pulse test)
V
---
1.0
V dc
IC = 500 mA, I
= 50 mA (pulse test)
V
---
1.2
V dc
IC = 1.0 A, I
= 100 mA (pulse test)
V
---
1.4
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
IC = 50 mA, V
= 10 V, f = 100 MHz
Open Circuit Output Capacitance
VCB = 10 V, I
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, I
= 0, 100 kHz < f < 1 MHz
Switching Characteristics
Per Figure 1, MIL-S-19500/396D
TC = 25oC unless otherwise specified
CE
CE
CE
CE
CE
CE
CE
CE
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX1
I
A
A
CEX2
I
CBO
I
EBO
FE1
FE2
FE3
FE4
FE5
FE6
40 --40 ---
5.0 ---
--- 100
--- 150 µA
--- 100 nA
--- 200 nA
V
V
V
nA
C
B
Pulse Delay Time
Pulse Rise Time
Pulse Storage Time
Pulse Fall Time
B
C
B
B
B
B
CE
E
C
CE(sat)1
CE(sat)2
CE(sat)3
CE(sat)4
BE(sat)1
BE(sat)2
BE(sat)3
BE(sat)4
|hFE|
C
OBO
C
IBO
1.8 6.0
--- 25
--- 80 pF
---
pF
Symbol Min Max Unit
t
d
t
r
t
s
t
f
--- 8 ns
--- 35 ns
--- 80 ns
--- 35 ns
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