SEMICOA 2N3735 Datasheet
Data Sheet No. 2N3735
Type 2N3735
Geometry TBD
Polarity NPN
Qual Level: Pending
Features:
• General-purpose NPN silicon
switching transistor which operates over a wide temperature
range.
• Housed in a TO-39 case.
• Also it will be available in chip
form using the TBD chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/395 which
Semicoa meets in all cases.
Generic Part Number:
2N3735
REF: MIL-PRF-19500/395
TO-39
Maximum Ratings
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power, TA = +25oC P
Power, TC = +25oC P
Thermal Resistance
V
CEO
V
CBO
V
EBO
I
C
T
T
R
JC
40 V
75 V
5.0 V
1.5 mA
1.0 W
2.9 W
o
0.060
C/mW
Operating Junction Temperature
Storage Temperature
o
T
J
T
STG
-55 to +200
-55 to +200
C
o
C
Data Sheet No. 2N3735
OFF Characteristics
Symbol
Min
Max
Unit
VCE = 30 V, V
= 2.0 V
I
---
200
nA
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
Small Signal Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 50 mA, V
= 10 V, f = 100 MHz
Open Circuit Output Capacitance
VCB = 10 V, I
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, I
= 0, 100 kHz < f < 1 MHz
Delay Time
VCC = 30 V, V
= 2 V, I
= 1 A, I
= 100 mA
Rise Time
VCC = 30 V, V
= 2 V, I
= 1 A, I
= 100 mA
Turn-off Time
VCC = 30 V, V
= 2 V, I
= 1 A, I
= IB2 = 100 mA
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 10 mA
Collector-Emitter Breakdown Voltage
IC = 10 µA
Emitter-Base Breakdown Voltage
IE = 10 µA
V
V
V
Collector-Base Cutoff Current
VCB = 30 V
Emitter-Base Cutoff Current
VEB = 4.0 V
Collector-Emitter Cutoff Current
EB
VCB = 30 V, VEB = 2.0 V, TA = +150oC I
Forward Current Transfer Ratio
IC = 10 mA, V
IC = 150 mA, V
IC = 500 mA, V
IC = 1.0 A, V
IC = 1.5 A, V
IC = 500 mA, V
= 1.0 V h
CE
= 1.0 V (pulse test) h
CE
= 1.0 V (pulse test) h
CE
= 1.5 V (pulse test) h
CE
= 5.0 V (pulse test) h
CE
= 1.0 V (pulsed), TA = +150oC
CE
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA V
IC = 150 mA, IB = 15 mA (pulse test) V
IC = 500 mA, IB = 50 mA (pulse test) V
IC = 1.0 A, IB = 100 mA (pulse test) V
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA V
IC = 150 mA, IB = 15 mA (pulse test) V
IC = 500 mA, IB = 50 mA (pulse test) V
IC = 1.0 A, IB = 100 mA (pulse test) V
(BR)CBO
(BR)CEO
(BR)EBO
I
CBO1
I
EBO1
CEX1
CEX2
FE1
FE2
FE3
FE4
FE5
h
FE6
CE(sat)1
CE(sat)2
CE(sat)3
CE(sat)4
BE(sat)1
BE(sat)2
BE(sat)3
BE(sat)4
40 ---
75 ---
5.0 ---
---
250 nA
--- 100
V
V
V
nA
--- 250 µA
30 --- --40 --- --40 140 --20 80 --20 --- ---
15 --- ---
--- 0.2 V dc
--- 0.3 V dc
--- 0.9 V dc
--- 0.30 V dc
--- 0.8 V dc
--- 1.0 V dc
--- 1.2 V dc
0.9 1.4 V dc
CE
E
C
BE
BE
BE
|hFE|
C
OBO
C
IBO
t
C
C
C
B1
B1
B1
d
t
r
t
off
2.5 6.0 ---
--- 9.0
--- 80
pF
pF
--- 8.0 ns
--- 40
ns
--- 60 ns
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