SEMICOA 2N3700 Datasheet
Data Sheet No. 2N3700
Maximum Ratings
Type 2N3700
Geometry 4500
Polarity NPN
Qual Level: JAN - JANS
Features:
• General-purpose low power silicon transistor.
• Housed in TO-46 case.
• Also available in chip form using
the 4500 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/391 which
Semicoa meets in all cases.
• Radiation graphs available.
Generic Part Number:
2N3700
REF: MIL-PRF-19500/391
TO-46
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
80 V
140 V
7.0 V
1.0 A
-55 to +200
-55 to +200
o
C
o
C
Data Sheet No. 2N3700
OFF Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Small Signal Characteristics
Symbol
Min
Max
Unit
Switching Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 100 µA
Collector-Emitter Breakdown Voltage
IC = 30 mA
Emitter-Base Breakdown Voltage
IE = 100 µA
Collector-Emitter Cutoff Current
VCE = 90 V
Emitter-Base Cutoff Current
V
= 5 V
EB
IC = 150 mA, V
= 10 V h
CE
IC = 0.1 mA, VCE = 10 V h
IC = 10 mA, VCE = 10 V (pulsed) h
IC = 500 mA, V
IC = 1 A, V
= 10 V (pulsed) h
CE
= 10 V (pulsed) h
CE
IC = 150 mA, IB = 15 mA (pulsed) V
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
I
EBO
FE1
FE2
FE3
FE4
FE5
BE(sat)
140 --- V
80 --- V
7.0 ---
--- 10 nA
--- 10 nA
100 300 ---
50 200 --90 --- --50 200 --15 --- ---
--- 1.1 V dc
V
IC = 150 mA, IB = 15 mA (pulsed) V
IC = 500 mA, IB = 50 mA (pulsed) V
Short Circuit Forward Current Transfer Ratio
IC = 1 mA, VCE = 5 V, f = 1 kHz
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 10 V, IC = 50 mA, f = 200 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 2.0 V, IC = 0, 100 kHz < f < 1 MHz
Collector-Base Time Constant
VCB = 10 V, IC = 10 mA, f = 79.8 MHz
Noise Figure
VCE = 10 V, IC = 100 µA, Rg = 1 kOhm
Pulse Response
15 ns, 50 ohm input pulse
CE(sat)1
CE(sat)2
AC h
|hFE|
C
OBO
C
IBO
rb'C
FE
C
--- 0.2 V dc
--- 0.5 V dc
80 400 ---
5.0 20 ---
--- 12
--- 60 pF
--- 400 ps
NF --- 4 dB
tON + t
OFF
--- 30 ns
pF
Loading...