SEMICOA 2N3507 Datasheet
Data Sheet No. 2N3507
Maximum Ratings
Type 2N3507
Geometry 1506
Polarity NPN
Qual Level: JAN - JANTXV
Features:
• General-purpose silicon transistor
for switching and amplifier applications.
• Housed in TO-39 case.
• Also available in chip form using
the 1506 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/349 which
Semicoa meets in all cases.
Generic Part Number:
2N3507
REF: MIL-PRF-19500/349
TO-39
TC = 25oC unless otherwise specified
Rating Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25oC
Derate above 25oC
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
T
STG
50 V
80 V
5.0 V
3.0 A
1.0 W
5.71
-65 to +200
-65 to +200
mW/oC
o
C
o
C
Data Sheet No. 2N3507
OFF Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Small Signal Characteristics
Symbol
Min
Max
Unit
Pulse Response Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Emitter Cutoff Current
VCE = 60 V, VEB = 4 V
Collector-Emitter Cutoff Current
VCE = 60 V, VEB = 4 V, TA = +150oC
Collector Current Continuous
VCB = 50 V
IC = 500 mA, V
= 1 V (pulsed) h
CE
IC = 1.5 A, VCE = 2 V (pulsed) h
IC = 2.5 A, VCE = 3 V (pulsed) h
IC = 3.0 A, V
IC = 500 mA, V
= 5 V (pulsed) h
CE
= 1 V (pulsed), TA = -55oC
CE
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX1
I
CEX2
h
80 --- V
50 --- V
5.0 ---
V
--- 1.0 µA
--- 1.0 µA
I
C
FE1
FE2
FE3
FE4
FE5
3.0 --- A
35 175 --30 150 --25 --- --20 --- ---
17 --- ---
IC = 500 mA, IB = 50 mA (pulsed) V
IC = 1.5 A, IB = 150 mA (pulsed) V
IC = 2.5 A, IB = 250 mA (pulsed) V
IC = 500 mA, IB = 50 mA (pulsed) V
IC = 1.5 A, IB = 150 mA (pulsed) V
IC = 2.5 A, IB = 250 mA (pulsed) V
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 5 V, IC = 100 mA, f = 20 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 3 V, IC = 0, 100 kHz < f < 1 MHz
Delay Time
IC = 1.5 A, IB1 = 150 mA
Rise Time
IC = 1.5 A, IB1 = 150 mA
Storage Time
IC = 1.5 mA, IB2 = IB1 = 150 mA
Fall Time
IC = 1.5 mA, IB2 = IB1 = 150 mA
BE(sat)1
BE(sat)2
BE(sat)3
CE(sat)1
CE(sat)2
CE(sat)3
|hFE|
C
OBO
C
IBO
t
d
t
r
t
s
t
f
--- 1.0 V dc
0.9 1.4 V dc
--- 2.0 V dc
--- 0.5 V dc
--- 1.0 V dc
--- 1.5 V dc
3.0 15 ---
--- 40
pF
--- 300 pF
--- 15 ns
---
30 ns
--- 55 ns
--- 35 ns
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