SEMICOA 2N3499L Datasheet
Data Sheet No. 2N3499L
Maximum Ratings
Type 2N3499L
Geometry 5620
Polarity NPN
Qual Level: JAN - JANTXV
Features:
• General-purpose silicon transistor
for switching and amplifier applications.
• Housed in TO-5 case.
• Also available in chip form using
the 5620 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/366 which
Semicoa meets in all cases.
Generic Part Number:
2N3499
REF: MIL-PRF-19500/366
TO-5
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter voltage
Collector-Base Voltage
Emitter-Base voltage
Collector Current, Continuous
Power Dissipation, TA = 25oC
Derate above 25oC
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
T
STG
100 V
100 V
6.0 V
500 mA
5.0 mW
28.8
-65 to +200
-65 to +200
mW/oC
o
C
o
C
Data Sheet No. 2N3499L
OFF Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Small Signal Characteristics
Symbol
Min
Max
Unit
Switching Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Base Cutoff Current
VCB = 50 V
Emitter-Base Cutoff Current
VEB = 4 V
IC = 100 µA, V
= 10 V (pulsed) h
CE
IC = 1.0 mA, VCE = 10 V (pulsed) h
IC = 10 mA, VCE = 10 V (pulsed) h
IC = 150 mA, V
IC = 300 mA, V
= 10 V (pulsed) h
CE
= 10 V (pulsed) h
CE
IC = 10 mA, IB = 1.0 mA V
IC = 300 mA, IB = 300 mA V
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
BE(sat)1
BE(sat)3
FE1
FE2
FE3
FE4
FE6
100 --- V
100 --- V
6.0 ---
--- 50 nA
--- 25 nA
35 --- --50 --- --75 --- ---
100 300 ---
20 --- ---
--- 0.8 V dc
--- 1.4 V dc
V
IC = 10 mA, IB = 1.0 mA V
IC = 300 mA, IB = 30 mA V
Short Circuit Forward Current Transfer Ratio
IC = 10 mA, VCE = 10 V, f = 1 kHz
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 20 V, IC = 20 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Noise Figure
VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz
Noise Figure
VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz
Saturated Turn On Switching time to 90%
IC = 150 mA, IB1 = 15 mA, VEB = 2 V
Saturated Turn Off Switching time to 10%
IC = 150 mA, IB2 = -I
= 15 mA
B1
CE(sat)1
CE(sat)3
AC h
|hFE|
C
OBO
C
IBO
FE
--- 0.2 V dc
--- 0.6 V dc
75 375 ---
1.5 8.0 ---
--- 10
--- 80 pF
NF --- 16 dB
NF --- 6.0 dB
t
t
ON
OFF
--- 115 ns
---
1150 ns
pF
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