SEMICOA 2N3498 Datasheet
Data Sheet No. 2N3498
Maximum Ratings
Type 2N3498
Geometry 5620
Polarity NPN
Qual Level: JAN - JANTXV
Features:
• General-purpose silicon transistor
for switching and amplifier applications.
• Housed in TO-39 case.
• Also available in chip form using
the 5620 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/366 which
Semicoa meets in all cases.
Generic Part Number:
2N3498
REF: MIL-PRF-19500/366
TO-39
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter voltage
Collector-Base Voltage
Emitter-Base voltage
Collector Current, Continuous
Power Dissipation, TA = 25oC
Derate above 25oC
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
T
STG
100 V
100 V
6.0 V
500 mA
5.0 mW
28.8
-65 to +200
-65 to +200
mW/oC
o
C
o
C
Data Sheet No. 2N3498
OFF Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
Small Signal Characteristics
Symbol
Min
Max
Unit
Switching Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IC = 10 µA
Collector-Base Cutoff Current
VCB = 50 V
Emitter-Base Cutoff Current
VEB = 4 V
Forward Current Transfer Ratio
IC = 100 µA, V
= 10 V (pulsed) h
CE
IC = 1.0 mA, VCE = 10 V (pulsed) h
IC = 10 mA, VCE = 10 V (pulsed) h
IC = 150 mA, V
IC = 500 mA, V
= 10 V (pulsed) h
CE
= 10 V (pulsed) h
CE
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA V
IC = 10 mA, IB = 1.0 mA V
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA V
IC = 300 mA, IB = 30 mA V
V
(BR)CBO
V
(BR)CEO
V
(BR)CEO
I
CBO
I
EBO
BE(sat)1
BE(sat)3
CE(sat)1
CE(sat)3
FE1
FE2
FE3
FE4
FE6
100 --- V
100 --- V
6.0 ---
--- 50 nA
--- 25 nA
20 --- --25 --- --35 --- --40 120 --15 --- ---
--- 0.8 V dc
--- 1.4 V dc
--- 0.2 V dc
--- 0.6 V dc
V
Short Circuit Forward Current Transfer Ratio
Forward Current Transfer Ratio
IC = 10 mA, VCE = 10 V, f = 1 kHz
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
VCE = 20 V, IC = 20 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Noise Figure
VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz
Noise Figure
VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz
Saturated Turn On Switching time to 90%
IC = 150 mA, IB1 = 15 mA, VEB = 2 V
Saturated Turn Off Switching time to 10%
IC = 150 mA, IB2 = -I
= 15 mA
B1
AC |hFE|
|hFE|
C
OBO
C
IBO
50 300 ---
1.5 8.0 ---
--- 10
--- 80 pF
NF --- 16 dB
NF --- 6.0 dB
t
t
ON
OFF
--- 115 ns
---
1150 ns
pF
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