SEMICOA 2N3485A Datasheet
Data Sheet No. 2N3485A
Maximum Ratings
Type 2N3485A
Geometry 0600
Polarity PNP
Qual Level: JAN - JANTXV
Features:
• General-purpose transistor for
switching and amplifier applicatons.
• Housed in a TO-46 case.
• Also available in chip form using
the 0600 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/392 which
Semicoa meets in all cases.
• The Typ values are actual batch
averages for Semicoa.
• Radiation Graphs available.
Generic Part Number:
2N3485A
REF: MIL-PRF-19500/392
TO-46
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
60 V
60 V
5.0 V
600 mA
-55 to +200
-55 to +200
o
C
o
C
Data Sheet No. 2N3485A
OFF Characteristics
Symbol
Min
Typ
Max
Unit
Electrical Characteristics
ON Characteristics
Symbol
Min
Typ
Max
Unit
Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small Signal Characteristics
Symbol
Min
Typ
Max
Unit
Short Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Input Capacitance, Output Open Circuited
Switching Characteristics
Symbol
Min
Typ
Max
Unit
Saturated Turn On Switching Time to 90%
Saturated Turn Off Switching Time to 10%
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 µA, pulsed
Collector-Base Cutoff Current
VCB = 50 V
Emitter-Base Cutoff Current
VEB = 3.5 V
IC = 100 µA, V
= 10 V h
CE
IC = 1.0 mA, VCE = 10 V h
IC = 10 mA, VCE = 10 V h
IC = 150 mA, VCE = 10 V (pulse test) h
IC = 500 mA, VCE = 10 V (pulse test) h
IC = 150 mA, IB = 15 mA (pulse test) V
IC = 500 mA, IB = 50 mA (pulse test) V
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
FE1
FE2
FE3
FE4
FE5
CE(sat)1
CE(sat)2
60 ---100
60 ---70
5.0 ---9.0
--- 100.25
--- 500.1
V
V
V
nA
nA
40 225 --- --40 250 --- --40 --- --- --40 --- 120 --40 80 --- ---
--- 0.18 0.4 V dc
--- 0.5 1.6 V dc
IC = 150 mA, IB = 15 mA (pulse test) V
IC = 500 mA, IB = 50 mA (pulse test) V
IC = 1 mA, VCE = 10 V, f = 1 kHz
VCB = 10 V, IE = 0 V, 100 kHz < f < 1 MHz
VEB = 2.0 V, IC = 0, 100 kHz < f < 1 MHz
16V, 50 ohm input pulse
16V, 50 ohm input pulse
BE(sat)1
BE(sat)2
h
FE
C
OBO
C
IBO
t
ON
t
OFF
--- 0.87 1.3 V dc
--- 1.0 2.6 V dc
40 250 ---
--- 6.0 8.0
--- 8.0 30
--- 25 45
--- 175 175 ns
---
pF
pF
ns
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