Data Sheet No. 2N3468
Type 2N3468
Geometry 6706
Polarity PNP
Qual Level: JAN - JANTXV
Features:
• General-purpose transistor for
switching and amplifier applicatons.
• Housed in a TO-39 case.
• Also available in chip form using
the 6706 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/348 which
Semicoa meets in all cases.
Generic Part Number:
2N3468
REF: MIL-PRF-19500/348
TO-39
Maximum Ratings
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
50 V
50 V
5.0 V
1.0 mA
-55 to +175
-55 to +175
o
C
o
C
Data Sheet No. 2N3468
Electrical Characteristics
Forward current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small Signal Characteristics
Switching Characteristics
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 µA, pulsed
Collector-Base Cutoff Current
VCB = 30 V
VCB = 30 V, TA = +150oC
Collector-Emitter Cutoff Current
VEB = 3.0 V, VCE = 30 V
IC = 150 mA, V
= 1.0 V (pulse test) h
CE
IC = 500 mA, VCE = 1.0 V (pulse test) h
IC = 1.0 A, VCE = 5 V (pulse test) h
IC = 150 mA, VCE = 1.0 V (pulse test), T = -55oC h
IC = 150 mA, IB = 15 mA (pulse test) V
IC = 500 mA, IB = 50 mA (pulse test) V
IC = 1.0 A, IB = 100 mA (pulse test) V
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO1
I
CBO2
I
CEX
CE(sat)1
CE(sat)2
CE(sat)3
FE1
FE2
FE3
FE4
50 ---
50 ---
5.0 ---
--- 100 nA
--- 50 µA
--- 100
nA
25 --- --25 75 --25 --- ---
10 --- ---
--- 0.35 V dc
--- 0.6 V dc
--- 1.2 V dc
V
V
V
IC = 150 mA, IB = 15 mA (pulse test) V
IC = 500 mA, IB = 50 mA (pulse test) V
IC = 1.0 A, IB = 100 mA (pulse test) V
Extrapolated Unity Gain Frequency
VCE = 10 V, IC = 50 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Delay Time
IC = 500 mA, I
= 50 mA, VEB = 2 V
B1
Rise Time
IC = 500 mA, I
= 50 mA, VEB = 2 V
B1
Storage Time
IC = 500 mA, I
B1
= I
= 50 mA
B2
Fall Time
IC = 500 mA, I
B1
= I
= 50 mA
B2
BE(sat)1
BE(sat)2
BE(sat)3
f
t
C
OBO
C
IBO
t
d
t
r
t
s
t
f
--- 1.0 V dc
0.8 1.2 V dc
--- 1.6 V dc
150 500
--- 25
MHz
pF
--- 100 pF
--- 10
ns
--- 30 ns
--- 60 ns
--- 30 ns