SEMICOA 2N2857 Datasheet
Data Sheet No. 2N2857UB
Maximum Ratings
Type 2N2857UB
Geometry 0011
Polarity NPN
Qual Level: JAN - JANS
Features:
• Low power, ultra-high frequency
transistor.
• Housed in a cersot case.
• Also available in chip form using
the 0011 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/343 which
Semicoa meets in all cases.
Generic Part Number:
2N2857
REF: MIL-PRF-19500/343
Cersot
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
15 V
30 V
3.0 V
40 mA
-65 to +200
-65 to +200
o
C
o
C
Data Sheet No. 2N2857UB
OFF Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small Signal Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 1 µA
Collector-Emitter Breakdown Voltage
IC = 3 mA
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Emitter Cutoff Current
VCB = 15 V
Collector-Base Cutoff Current
VCB = 15 V
IC = 10 mA, IB = 1 mA
IC = 150 mA, IB = 1 mA
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
I
CBO
V
CE(sat)
V
BE(sat)
30
---
15 ---
3.0 ---
--- 100
--- 10
--- 0.4 V dc
--- 1.0 V dc
nA
nA
V
V
V
Forward Current Transfer Ratio
IC = 3 mA, VCE = 1 V
IC = 2 mA, V
= 6 V, case lead floating
CE
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
VCE = 6 V, IC = 5 mA, f = 100 MHz
Small Signal Power Gain
Collector-Base Feedback Capacitance
VCB = 10 V, IE = 2 mA, 100 kHz < f < 1 MHz
Collector-Base Time Constant
VCE = 6 V, IE = 2 mA, f = 31.9 MHz
Noise Figure
VCE = 6 V, IC = 1.5 mA,rg = 50 ohms, 450 MHz
h
FE
h
FE
|hFE|
G
C
CB
rb'C
PE
C
30 150 --50 220 ---
10 21 ---
12.5 21 dB
--- 1.0
4.0 15 ps
NF --- 4.5 dB
pF
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