SEMICOA 2N2484 Datasheet
Data Sheet No. 2N2484
Type 2N2484
Geometry 0220 / 0307
Polarity NPN
Qual Level: Pending
Features:
• General-purpose high gain, low
power transistor which operates
over a wide temperature range.
• Housed in a TO-18 case.
• Also available in chip form using
the 0220 / 0307 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/376 which
Semicoa meets in all cases.
Generic Part Number:
2N2484
REF: MIL-PRF-19500/376
TO-18
Maximum Ratings
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
60 V
60 V
6.0 V
50 mA
-65 to +200
-65 to +200
o
C
o
C
Data Sheet No. 2N2484
OFF Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 µA
V
V
V
Collector-Base Cutoff Current
VCB = 45 V
VCB = 45 V, TA = +150oC
Emitter-Base Cutoff Current
VEB = 5.0 V
Collector-Emitter Cutoff Current
VCE = 5 V I
VCE =45 V I
(BR)CBO
(BR)CEO
(BR)EBO
I
CBO1
I
CBO2
I
EBO
CEO
CES
60 ---
60 ---
6.0 ---
--- 5 nA
--- 10 µA
--- 2
nA
--- 2 nA
--- 5 nA
V
V
V
DC Current Gain
IC = 1 µA, V
IC = 10 µA, V
IC = 100 µA, V
IC = 500 µA, V
IC = 1 mA, V
IC = 10 mA, V
IC = 10 µA, V
Collector-Emitter Saturation Voltage Saturated
= 5 V h
CE
= 5 V h
CE
= 5 V h
CE
= 5 V h
CE
= 5 V h
CE
= 5 V (pulsed) h
CE
= 5 V, TA = -55oC h
CE
IC = 150 mA, IB = 100 µA V
Base-Emitter Saturation Voltage Non Saturated
VCE = 5 V, IC = 100 µA V
FE1
FE2
FE3
FE4
FE5
FE6
FE7
CE(sat)
BE
45 --- --200 500 --225 675 --250 800 --250 800 --225 800 ---
35 --- ---
--- 0.3 V dc
0.5 0.7 V dc
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