SEMICOA 2N2222A Datasheet
Data Sheet No. 2N2222AUB
Maximum Ratings
Type 2N2222AUB
Geometry 0400
Polarity NPN
Qual Level: JAN - JANS
Features:
• General-purpose transistor for
switching and amplifier applicatons.
• Housed in a cersot case.
• Also available in chip form using
the 0400 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/255 which
Semicoa meets in all cases.
• The Typ values are actual batch
averages for Semicoa.
• Radiation Graphs available.
Generic Part Number:
2N2222A
REF: MIL-PRF-19500/255
Cersot
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
50 V
75 V
6.0 V
800 mA
-65 to +200
-65 to +200
o
C
o
C
Data Sheet No. 2N2222AUB
OFF Characteristics
Symbol
Min
Typ
Max
Unit
Electrical Characteristics
ON Characteristics
Symbol
Min
Typ
Max
Unit
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small Signal Characteristics
Symbol
Min
Typ
Max
Unit
Switching Characteristics
Symbol
Min
Typ
Max
Unit
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Emitter Cutoff Current
VCE = 50 V
Collector-Base Cutoff Current
VCB = 60 V
Emitter-Base Cutoff Current
VEB = 4 V
IC = 100 µA, V
= 10 V h
CE
IC = 1.0 mA, VCE = 10 V h
IC = 10 mA, VCE = 10 V h
IC = 150 mA, VCE = 10 V (pulse test) h
IC = 500 mA, VCE = 10 V (pulse test) h
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
I
CBO1
I
EBO
FE1
FE2
FE3
FE4
FE5
75 ---120
50 ---65
6.0 ---7.0
--- 503.0
--- 102.0
--- 100.5
V
V
V
nA
nA
nA
50 180 --- ---
75 200 325 --100 200 --- --100 200 300 ---
30 75 --- ---
IC = 150 mA, IB = 15 mA (pulse test) V
IC = 500 mA, IB = 50 mA (pulse test) V
IC = 150 mA, IB = 15 mA (pulse test) V
IC = 500 mA, IB = 50 mA (pulse test) V
Short Circuit Forward Current Transfer Ratio
IC = 1 mA, VCE = 10 V, f = 1kHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0 V, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Saturated Turn On Switching Time to 90%
16V, 50 ohm input pulse
Saturated Turn Off Switching Time to 10%
16V, 50 ohm input pulse
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
AC h
C
OBO
C
IBO
t
ON
t
OFF
FE
--- 0.1 0.3 V dc
--- 0.3 1.0 V dc
0.6 0.85 1.2 V dc
--- 1.0 2.0 V dc
50 240 ---
--- 4.5 8
--- 17.5 25
--- 14 35
--- 175 300 ns
---
pF
pF
ns
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