Semelab Plc SML9030-T254 Datasheet

SML9030–T254

Prelim. 1/95

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current (VGS= -10V , T

case

= 25°C)

I

D

Continuous Drain Current (VGS= -10V , T

case

= 100°C)

I

DM

Pulsed Drain Current

1

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

E

AS

Single Pulse Avalanche Energy

2

I

AR

Avalanche Current

1

E

AR

Repetitive Avalanche Energy

1

dv/dt Peak Diode Recovery

3

T

J

Operating Junction Temperature

T

STG

Storage Temperature Range

R

q

JC

Thermal Resistance Junction to Case

R

q

JA

Thermal Resistance Junction to Ambient

±20V

-18A

-13A

-72A
88W

0.59W/°C
370mJ

-18A

8.8mJ

-4.5V/ns
–55 to +175°C
–55 to +200°C

0.6°C/W

48°C/W

MECHANICAL DATA

Dimensions in mm (inches)

P–CHANNEL

MOS

TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

FEATURES

• P CHANNEL

• REPETITIVE AVALANCHE RATED

• DYNAMIC dv/dt RATING

• FAST SWITCHING

• EASE OF PARALLELING

• SIMPLE DRIVE REQUIREMENTS

Notes

1) Repetitive Rating: Pulse width limited by maximum junction temperature.

2) @ VDD= -25V , L = 1.3mH , RG= 25W, IAS= -18A , Starting TJ= 25°C.

3) @ ISD£

-18A , di/dt £170A/ms , VDD£

BV

DSS

, TJ£

175°C.

V

DSS

–50V

I

D(cont)

–18A

R

DS(on)

0.14

WW

WW

TO–254 – Metal Package

Pin 1 – Drain Pin 2 – Source Pin 3 – Gate

3.53 (0.139)

3.78 (0.149)

16.89 (0.665)

17.40 (0.685)

30.35 (1.195)

31.40 (1.235)

13.59 (0.535)

Dia.

13.84 (0.545)

3.81 (0.150)

13.59 (0.535)

13.84 (0.545)

123

0.89 (0.035)

1.14 (0.045)

BSC

20.07 (0.790)

20.32 (0.800)

6.32 (0.249)

6.60 (0.260)

3.81 (0.150)
BSC

1.02 (0.040)

1.27 (0.050)

-50

-0.060

0.14

-2 -4

5.9

-100

-500

-100
100

1100

620
100

34

9.9
16

18

120

20
58

-18

-72

-6.3

100 200

0.28 0.52

4.5

7.5

SML9030–T254

Prelim. 1/95

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

VGS= 0 ID= -250mA
Reference to 25°C
ID= -1mA
VGS= -10V ID= -11A
VDS= V

GS

ID= -250mA
VDS= -25V ID= -11A
VDS= -60V VGS= 0
VDS= -48V VGS= 0

TJ= 125°C
VGS= -20V
VGS= 20V

VGS= 0
VDS= -25V
f = 1MHz
ID= -18A
VDS= -48V
VGS= -10V
VDD= -30V
ID= -18A
RG= 12

W

RD= 1.5

W

IS= -18A TJ= 25°C
VGS= 0
IF= -18A TJ= 25°C
di/ dt=

100A/ms

ELECTRICAL CHARACTERISTICS (T

amb

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On Resistance

1

Gate Threshold Voltage
Forward Transconductance

1

Zero Gate Voltage Drain Current

Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

1

Gate – Source Charge

1

Gate – Drain (“Miller”) Charge

1

Turn–On Delay Time

1

Rise Time

1

Turn–Off Delay Time

1

Fall Time

1

Continuous Source Current (Body Diode)
Pulse Source Current 2(Body Diode)

Diode Forward Voltage

1

Reverse Recovery Time

1

Reverse Recovery Charge

1

V

V/°C

W

V
S

m

A

nA

pF

nC

nC

A

V

ns

m

C

nH

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

L

D

L

S

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(from 6mm down lead to centre of drain bond pad)

Internal Source Inductance

(from 6mm down lead to centre of source bond pad)

PACKAGE CHARACTERISTICS