Semelab Plc SML9030-220M Datasheet

SML9030–220M

Prelim. 3/97

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current (VGS= -10V , T

case

= 25°C)

I

D

Continuous Drain Current (VGS= -10V , T

case

= 100°C)

I

DM

Pulsed Drain Current

1

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

T

J

Operating Junction Temperature

T

STG

Storage Temperature Range

R

q

JC

Thermal Resistance Junction to Case

R

q

JA

Thermal Resistance Junction to Ambient

±20V

13.2A

8.3A
53A

45W

0.36W/°C
–55 to +150°C
–55 to +150°C

2.8°C/W
80°C/W

MECHANICAL DATA

Dimensions in mm (inches)

P–CHANNEL

MOS

TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

FEATURES

• P CHANNEL

• REPETITIVE AVALANCHE RATED

• DYNAMIC dv/dt RATING

• FAST SWITCHING

• EASE OF PARALLELING

• SIMPLE DRIVE REQUIREMENTS

V

DSS

–50V

I

D(cont)

13.2A

R

DS(on)

0.15

WW

WW

TO–220 – Metal Package

Pin 1 – Gate Pin 2 – Drain Pin 3 – Source

4.70

10.41

10.67

3.56

3.81

13.39

16.38

13.64

16.89

10.41

10.92

0.70

0.90

Dia.

5.00

123

12.70

19.05

2.54
BSC

2.65

2.75

0.89

1.14

Parameter Test Conditions Min. Typ. Max. Unit

-50

-0.060

0.15

-2 -4

3.1

-100

-500

-100
100

900
570
140

39
10
15
18

170

32
96

13.2

53

-6.3

120 250

0.47 1.1

4.5

7.5

SML9030–220M

Prelim. 3/97

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

VGS= 0 ID= -250mA
Reference to 25°C
ID= -1mA
VGS= -10V ID= 9.3A
VDS= V

GS

ID= -250mA
VDS= -40V ID= 9.3A
VDS= -60V VGS= 0
VDS= -48V VGS= 0

TJ= 125°C
VGS= -20V
VGS= 20V

VGS= 0
VDS= -25V
f = 1MHz
ID= 13.2A
VDS= -48V
VGS= -10V
VDD= -30V
ID= 13.2A
RG= 12

W

RD= 1.5

W

IS= -18A TJ= 25°C
VGS= 0
IF= -18A TJ= 25°C
di/ dt=

100A/ms

ELECTRICAL CHARACTERISTICS (T

amb

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On Resistance

1

Gate Threshold Voltage
Forward Transconductance

1

Zero Gate Voltage Drain Current

Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

1

Gate – Source Charge

1

Gate – Drain (“Miller”) Charge

1

Turn–On Delay Time

1

Rise Time

1

Turn–Off Delay Time

1

Fall Time

1

Continuous Source Current (Body Diode)
Pulse Source Current 2(Body Diode)

Diode Forward Voltage

1

Reverse Recovery Time

1

Reverse Recovery Charge

1

V

V/°C

W

V
S

m

A

nA

pF

nC

nS

A

V

ns

m

C

nH

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

L

D

L

S

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(from 6mm down lead to centre of drain bond pad)

Internal Source Inductance

(from 6mm down lead to centre of source bond pad)

PACKAGE CHARACTERISTICS