Semelab Plc SML50C15 Datasheet
SML50C15
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
11/99
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
TJ, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
500
15
60
±30
±40
140
2
–55 to 150
300
20
30
960
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
4) Starting TJ= 25°C, L = 4.8mH, RG= 25W, Peak IL= 20A
V
DSS
500V
I
D(cont)
15A
R
DS(on)
0.270
WW
WW
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• TO–254 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
3.53 (0.139)
TO–254 Package Outline.
Dimensions in mm (inches)
Pin 1 – Drain Pin 2 – Source Pin 3 – Gate
3.78 (0.149)
16.89 (0.665)
17.40 (0.685)
30.35 (1.195)
31.40 (1.235)
13.59 (0.535)
13.84 (0.545)
Dia.
20.07 (0.790)
20.32 (0.800)
13.59 (0.535)
13.84 (0.545)
123
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
3.81 (0.150)
BSC
D
G
S
SML50C15
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
11/99
Characteristic Test Conditions Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic Test Conditions Min. Typ. Max. Unit
15
60
1.3
410
6.5
I
S
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
(Body Diode)
VGS= 0V , IS= – ID[Cont.]
IS= – ID[Cont.] , dls / dt = 100A/ms
IS= – ID[Cont.] , dls / dt = 100A/ms
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
m
C
Characteristic Min. Typ. Max. Unit
0.625
40
R
q
JC
R
q
JA
Junction to Case
Junction to Ambient
°C/W
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS= 0V
VDS= 25V
f = 1MHz
VGS= 10V
VDD= 0.5 V
DSS
ID= ID[Cont.] @ 25°C
VGS= 15V
VDD= 0.5 V
DSS
ID= ID[Cont.] @ 25°C
RG= 1.6
W
pF
nC
ns
2600 3180
360 500
150 225
110 175
19 30
45 70
10 20
11 22
43 70
714
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Characteristic Test Conditions Min. Typ. Max. Unit
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
VGS= 0V , ID= 250mA
VDS= V
DSS
VDS= 0.8V
DSS
, TC= 125°C
VGS= ±30V , VDS= 0V
VDS= VGS, ID= 1.0mA
VDS> I
D(ON)
x R
DS(ON)
Max
VGS= 10V
VGS= 10V , ID= 0.5 ID[Cont.]
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
500
25
250
±100
24
15
0.27
V
m
A
nA
V
A
W
STATIC ELECTRICAL RATINGS (T
case
= 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS
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