Semelab Plc SML50B30, SML50B30F Datasheet
SML50B30
8/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
TJ, T
STG
T
L
I
AR
E
AR
E
AS
1
32
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
20.80 (0.819)
21.46 (0.845)
6.15
(0.242)
BSC
19.81 (0.780)
20.32 (0.800)
4.50
(0.177)
Max.
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
TO–247AD Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
500
30
120
±20
±30
370
2.96
–55 to 150
300
30
30
1300
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ= 25°C, L = 2.89mH, RG= 25W, Peak IL= 30A
V
DSS
500V
I
D(cont)
30A
R
DS(on)
0.170
WW
WW
Pin 1 – Gate Pin 2 – Drain Pin 3 – Source
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO–247 Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
SML50B30
8/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Characteristic Test Conditions Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic Test Conditions Min. Typ. Max. Unit
30
120
1.3
510
10.2
I
S
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
(Body Diode)
VGS= 0V , IS= – ID[Cont.]
IS= – ID[Cont.] , dls / dt = 100A/ms
IS= – ID[Cont.] , dls / dt = 100A/ms
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
m
C
Characteristic Min. Typ. Max. Unit
0.34
40
R
q
JC
R
q
JA
Junction to Case
Junction to Ambient
°C/W
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS= 0V
VDS= 25V
f = 1MHz
VGS= 10V
VDD= 0.5 V
DSS
ID= ID[Cont.] @ 25°C
VGS= 15V
VDD= 0.5 V
DSS
ID= ID[Cont.] @ 25°C
RG= 1.6
W
pF
nC
ns
4400 5280
600 840
230 350
200 300
30 45
80 120
12 25
14 30
55 80
11 20
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Characteristic Test Conditions Min. Typ. Max. Unit
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
VGS= 0V , ID= 250mA
VDS= V
DSS
VDS= 0.8V
DSS
, TC= 125°C
VGS= ±30V , VDS= 0V
VDS= VGS, ID= 1.0mA
VDS> I
D(ON)
x R
DS(ON)
Max
VGS= 10V
VGS= 10V , ID= 0.5 ID[Cont.]
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
500
25
250
±100
2 4
30
0.170
V
m
A
nA
V
A
W
STATIC ELECTRICAL RATINGS (T
case
= 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS
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