Semelab Plc SML40H19, SML40H22 Datasheet
SML40H22
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
TJ, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
400
22
88
±30
±40
200
1.6
–55 to 150
300
22
30
1210
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ= 25°C, L = 5.00mH, RG= 25Ω, Peak IL= 22A
V
DSS
400V
I
D(cont)
22A
R
DS(on)
0.180
ΩΩ
• Faster Switching
• Lower Leakage
• TO–258 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
123
17.65 (0.695)
17.39 (0.685)
4.19 (0.165)
3.94 (0.155)
Dia.
13.84 (0.545)
13.58 (0.535)
17.96 (0.707)
17.70 (0.697)
19.05 (0.750)
12.70 (0.500)
1.65 (0.065)
1.39 (0.055)
Typ.
5.08 (0.200)
BSC
3.56 (0.140)
BSC
21.21 (0.835)
20.70 (0.815)
1.14 (0.707)
0.88 (0.035)
6.86 (0.270)
6.09 (0.240)
TO–258 Package Outline.
Dimensions in mm (inches)
Pin 1 – Drain Pin 2 – Source Pin 3 – Gate
SML40H22
Semelab plc.Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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Characteristic Test Conditions Min. Typ. Max.Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic Test Conditions Min. Typ. Max.Unit
22
88
1.3
380
6.4
I
S
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
(Body Diode)
VGS= 0V , IS= – ID[Cont.]
IS= – ID[Cont.] , dls / dt = 100A/µs
IS= – ID[Cont.] , dls / dt = 100A/µs
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
µC
Characteristic Min. Typ. Max.Unit
0.62
40
R
θJC
R
θJA
Junction to Case
Junction toAmbient
°C/W
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS= 0V
VDS= 25V
f = 1MHz
VGS= 10V
VDD= 0.5 V
DSS
ID= ID[Cont.] @ 25°C
VGS= 15V
VDD= 0.5 V
DSS
ID= ID[Cont.] @ 25°C
RG= 1.6Ω
pF
nC
ns
3350 4020
510 715
198 300
135 200
24 36
60 90
11 22
10 20
48 75
612
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Characteristic Test Conditions Min. Typ. Max.Unit
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
VGS= 0V , ID= 250µA
VDS= V
DSS
VDS= 0.8V
DSS
, TC= 125°C
VGS= ±30V , VDS= 0V
VDS= VGS, ID= 1.0mA
VDS> I
D(ON)
x R
DS(ON)
Max
VGS= 10V
VGS= 10V , ID= 0.5 ID[Cont.]
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
400
25
250
±100
24
22
0.180
V
µA
nA
V
A
Ω
STATIC ELECTRICAL RATINGS (T
case
= 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS
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