Semelab Plc SML120J15 Datasheet
SML120J15
SOT–227 Package Outline.
Dimensions in mm (inches)
11.8 (0.463)
31.5 (1.240)
31.7 (1.248)
7.8 (0.307)
8.2 (0.322)
1
R
2
W =
H =
4.1 (0.161
4.3 (0.169
4.8 (0.187)
4.9 (0.193)
(4 p lac es)
4.0 (0.157)
4.2 (0.165)
12.2 (0.480)
8.9 (0.350)
)
9.6 (0.378)
)
Hex Nut M 4
(4 places)
ENHANCEMENT MODE
N–CHANNEL
HIGH VOLTAGE
0.75 (0.030)
0.85 (0.033)
25.2 (0.992)
25.4 (1.000)
12.6 (0.496)
12.8 (0.504)
POWER MOSFETS
34
3.3 (0.129)
3.6 (0.143)
14.9 (0.587)
15.1 (0.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
R =
4.0 (0.157)
(2 Place s)
S
S
D
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (T
V
I
I
V
V
P
D
DM
DSS
GS
GSM
D
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
Derate Linearly
5.1 (0.201)
5.9 (0.232)
1.95 (0.077)
2.14 (0.084)
*
Source terminals are shorted
internally. Current handling
capability is equal for
either Source terminal.
= 25°C unless otherwise stated)
case
= 25°C
case
V
DSS
I
D(cont)
R
DS(on)
1200V
15A
0.800
ΩΩ
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular SOT–227 Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
1200
15
60
±30
±40
450
3.6
V
A
A
V
W
W/°C
TJ, T
T
L
I
AR
E
AR
E
AS
STG
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
1
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
(Repetitive and Non-Repetitive)
1
2
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ= 25°C, L = 22.22mH, RG= 25Ω, Peak IL= 15A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
–55 to 150
300
15
50
2500
°C
A
mJ
5/99
SML120J15
STATIC ELECTRICAL RATINGS (T
Characteristic Test Conditions Min. Typ. Max. Unit
BV
DSS
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
(VGS= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
DYNAMIC CHARACTERISTICS
Characteristic Test Conditions Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
= 25°C unless otherwise stated)
case
VGS= 0V , ID= 250µA
VDS= V
VDS= 0.8V
VGS= ±30V , VDS= 0V
VDS= VGS, ID= 2.5mA
VDS> I
VGS= 10V
2
VGS= 10V , ID= 0.5 ID[Cont.]
VGS= 0V
VDS= 25V
f = 1MHz
VGS= 10V
VDD= 0.5 V
ID= ID[Cont.] @ 25°C
VGS= 15V
VDD= 0.5 V
ID= ID[Cont.] @ 25°C
RG= 0.6Ω
DSS
D(ON)
, TC= 125°C
DSS
x R
DS(ON)
DSS
DSS
Max
1200
V
25
µA
250
±100
24
15
0.800
nA
V
A
Ω
6600
560
pF
270
300
28
nC
150
16
12
ns
59
12
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic Test Conditions Min. Typ. Max. Unit
I
I
V
t
Q
S
SM
SD
rr
rr
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
1
2
Reverse Recovery Time
Reverse Recovery Charge
(Body Diode)
(Body Diode)
VGS= 0V , IS= – ID[Cont.]
IS= – ID[Cont.] , dls / dt = 100A/µs
IS= – ID[Cont.] , dls / dt = 100A/µs
THERMAL CHARACTERISTICS
Characteristic Min. Typ. Max. Unit
R
R
θJC
θJA
Junction to Case
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
1080
22
15
60
1.3
0.28
40
A
V
ns
µC
°C/W
5/99
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