Semelab Plc SML10J144 Datasheet
D
S
G
1
34
2
R
38.0 (1.496)
38.2 (1.504)
30.1 (1.185)
30.3 (1.193)
14.9 (0.587)
15.1 (0.594)
3.3 (0.129)
3.6 (0.143)
7.8 (0.307)
8.2 (0.322)
31.5 (1.240)
31.7 (1.248)
4.0 (0.157)
(2 Place s)
R =
4.0 (0.157)
4.2 (0.165)
)
)
4.1 (0.161
4.3 (0.169
4.8 (0.187)
4.9 (0.193)
(4 p lac es)
W =
H =
8.9 (0.350)
9.6 (0.378)
11.8 (0.463)
12.2 (0.480)
Hex Nut M 4
(4 places)
12.6 (0.496)
12.8 (0.504)
25.2 (0.992)
25.4 (1.000)
0.75 (0.030)
0.85 (0.033)
5.1 (0.201)
5.9 (0.232)
1.95 (0.077)
2.14 (0.084)
SOT–227 Package Outline.
Source terminals are shorted
internally. Current handling
capability is equal for
either Source terminal.
*
S
G
S
D
Dimensions in mm (inches)
SML10J144
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
ABSOLUTE MAXIMUM RATINGS (T
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
TJ, T
STG
T
L
I
AR
E
AR
E
AS
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ= 25°C, L = 241µH, RG= 25Ω, Peak IL= 144A
E-mail: sales@semelab.co.uk
1
(Repetitive and Non-Repetitive)
= 25°C unless otherwise stated)
case
= 25°C
case
1
2
Website: http://www.semelab.co.uk
V
DSS
I
D(cont)
R
DS(on)
100V
144A
0.011
ΩΩ
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular SOT–227 Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
100
144
576
±30
±40
450
3.6
–55 to 150
300
144
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
5/99
SML10J144
STATIC ELECTRICAL RATINGS (T
Characteristic Test Conditions Min. Typ. Max. Unit
BV
DSS
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
(VGS= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
DYNAMIC CHARACTERISTICS
Characteristic Test Conditions Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
= 25°C unless otherwise stated)
case
VGS= 0V , ID= 250µA
VDS= V
VDS= 0.8V
VGS= ±30V , VDS= 0V
VDS= VGS, ID= 2.5mA
VDS> I
VGS= 10V
2
VGS= 10V , ID= 0.5 ID[Cont.]
VGS= 0V
VDS= 25V
f = 1MHz
VGS= 10V
VDD= 0.5 V
ID= ID[Cont.] @ 25°C
VGS= 15V
VDD= 0.5 V
ID= ID[Cont.] @ 25°C
RG= 0.6Ω
DSS
D(ON)
, TC= 125°C
DSS
x R
DS(ON)
DSS
DSS
Max
100
V
250
µA
1000
±100
24
144
0.011
nA
V
A
Ω
8600
3250
pF
1180
310
95
nC
120
16
48
ns
51
9
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic Test Conditions Min. Typ. Max. Unit
I
I
V
t
Q
S
SM
SD
rr
rr
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
1
2
Reverse Recovery Time
Reverse Recovery Charge
(Body Diode)
(Body Diode)
VGS= 0V , IS= – ID[Cont.]
IS= – ID[Cont.] , dls / dt = 100A/µs
IS= – ID[Cont.] , dls / dt = 100A/µs
THERMAL CHARACTERISTICS
Characteristic Min. Typ. Max. Unit
R
R
θJC
θJA
Junction to Case
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
250
2.5
144
576
1.3
0.28
40
A
V
ns
µC
°C/W
5/99
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