Semelab Plc SML1001RHN Datasheet

SML1001RHN
SML901RHN0

Prelim. 7/98

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

SML

Parameter 901RHN 1001RHN Unit

Characteristic / Test Conditions / Part Number Min. Typ. Max. Unit

BV

DSS

I

DSS

I

GSS

I

D(ON)

V

GS(TH)

R

DS(ON)

V

DSS

I

D

I

DM

V

GS

P

D

TJ, T

STJ

T

L

TO–258 Package Outline.

Dimensions in mm (Inches)

Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current

1

Gate – Source Voltage
Total Power Dissipation @ T

case

= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Lead Tempeature (0.063” from Case for 10 Sec.)

SML1001RHN
SML901RHN

900 1000

10

40
±30
250

2

–55 to +150°C

300

V
A
A
V

W

W/°C

°C

Drain – Source Breakdown Voltage

Zero Gate Voltage Drain Current
(VGS= 0V)
Gate – Source Leakage Current

On State Drain Current

2

Gate Threshold Voltage
Static Drain – Source On State Resistance

2

1000

900

250
1000
±100

10

24

1.00

V

m

A

nA

A

V

W

MAXIMUM RATINGS (T

case

=25°C unless otherwise stated)

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%

STATIC ELECTRICAL RATINGS (T

case

=25°C unless otherwise stated)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

4TH GENERATION MOSFET

D

G

S

VGS= 0V
ID= 250mA
VDS= V

DSS

VDS= 0.8V

DSS

TC= 125°C
VGS= ±30V VDS= 0V
VDS> I

D(ON)

x R

DS(ON)

Max
VGS= 10V
VDS= V

GS

ID= 1.0mA

VGS= 10V , ID= 0.5 ID[Cont.]

Pin 1 – Drain Pin 2 – Source Pin 3 – Gate

6.86 (0.270)

17.65 (0.695)

17.39 (0.685)

4.19 (0.165)

3.94 (0.155)

17.96 (0.707)

17.70 (0.697)

13.84 (0.545)

19.05 (0.750)

12.70 (0.500)

123

13.58 (0.535)

5.08 (0.200)

1.65 (0.065)

1.39 (0.055)
Typ.

Dia.

BSC

1.14 (0.707)

0.88 (0.035)

21.21 (0.835)

20.70 (0.815)

6.09 (0.240)

3.56 (0.140)
BSC

SML1001RHN
SML901RHN0

Prelim. 7/98

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Characteristic Test Conditions. Min. Typ. Max. Unit

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic / Test Conditions. Part Number Min. Typ. Max. Unit

10
40

1.3

320 636 1200

2.2 4.5 9

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current (Body Diode)
Pulsed Source Current1(Body Diode)

Diode Forward Voltage

2

Reverse Recovery Time

Reverse Recovery Charge

VGS= 0V
IS= – ID[Cont.]
IS= – ID[Cont.]
dls / dt = 100A/ms

A
A

V

ns

µC

Characteristic / Test Conditions / Part Number Min. Typ. Max. Unit

250
250

40

SOA1
SOA2

I

LM

VDS= 0.4 V

DSS

, IDS= PD/ 0.4 V

DSS

, t = 1 Sec

IDS= IDS[Cont.] , VDS= PD/ ID[Cont.] , t = 1 Sec

Safe Operating Area
Safe Operating Area
Inductive Current Clamped

W

A

Characteristic / Test Conditions. Min. Typ. Max. Unit

0.50
40

R

q

JC

Junction to Case
Junction to Ambient

°C/W
°C/W

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS

SAFE OPERATING AREA CHARACTERISTICS

THERMAL CHARACTERISTICS (T

case

=25°C unless otherwise stated)

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%

3) See MIL–STD–750 Method 3471

Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge

3

Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

VGS= 0V

VDS= 25V

f = 1MHz

VGS= 10V

ID= ID[Cont.]

VDD= 0.5 V

DSS

VDD= 0.5 V

DSS

ID= ID[Cont.]

VGS= 15V
RG= 1.8

W

pF

nC

ns

2460 2950

360 500
105 160

90 130

9.3 14
47 70
15 30
16 32
64 95
24 48