Semelab Plc SML1001R3AN, SML1001R1AN Datasheet
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
SML
Parameter 901R1AN 1001R1AN 901R3AN 1001R3AN Unit
Characteristic / Test Conditions / Part Number Min. Typ. Max. Unit
LAB
SEME
Prelim. 12/00
BV
DSS
I
DSS
I
GSS
I
D(ON)
V
GS(TH)
R
DS(ON)
V
DSS
I
D
I
DM
V
GS
P
D
TJ, T
STJ
TO3 Package Outline.
Dimensions in mm (Inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
SML1001R1AN / SML1001R3AN
SML901R1AN / SML901R3AN
(VGS= ±30V , VDS= 0V)
SML1001R1AN / SML901R1AN
SML1001R1AN / SML901R3AN
SML1001R1AN / SML901R1AN
SML1001R3AN / SML901R3AN
POWER MOS IV™
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
900 1000 900 1000
9.5 8.5
38 34
±30
230
–55 to 150
V
A
A
V
W
°C
Drain – Source Breakdown Voltage
(VGS= 0V , ID= 250mA)
Zero Gate Voltage Drain Current
Gate – Source Leakage Current
On State Drain Current
2
(VDS> I
D(ON)
x R
DS(ON)
Max , VGS= 10V)
Gate Threshold Voltage
Static Drain – Source On State Resistance
2
(VGS=10V , ID= 0.5 ID[Cont.])
1000
900
250
1000
±100
9.5
8.5
24
1.1
1.3
V
m
A
nA
A
V
W
MAXIMUM RATINGS (T
case
=25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS (T
case
=25°C unless otherwise stated)
SML1001R1AN 1000V 9.5A 1.10
WW
WW
SML901R1AN 900V 9.5A 1.10
WW
WW
SML1001R3AN 1000V 8.5A 1.30
WW
WW
SML901R3AN 900V 8.5A 1.30
WW
WW
(VGS= 0V , VDS= V
DSS
)
(VGS= 0V , VDS= 0.8V
DSS
, TC= 125°C)
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Characteristic Test Conditions. Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic / Test Conditions. Part Number Min. Typ. Max. Unit
9.5
8.5
38
34
1.3
320 636 1200
2.2 4.5 9
Prelim. 12/00
LAB
SEME
SML1001R1AN 1000V 9.5A 1.10
WW
WW
SML901R1AN 900V 9.5A 1.10
WW
WW
SML1001R3AN 1000V 8.5A 1.30
WW
WW
SML901R3AN 900V 8.5A 1.30
WW
WW
I
S
I
SM
V
SD
t
rr
Q
rr
SML1001R1AN / SML901R1AN
SML901R3AN / SML901R3AN
SML1001R1AN / SML901R1AN
SML1001R3AN / SML901R3AN
Continuous Source Current (Body Diode)
Pulsed Source Current1(Body Diode)
Diode Forward Voltage
2
(VGS= 0V , IS= – ID[Cont.])
Reverse Recovery Time
(IS= – ID[Cont.] , dls / dt = 100A/ms
Reverse Recovery Charge
A
A
V
ns
m
C
Characteristic / Test Conditions / Part Number Min. Typ. Max. Unit
230
230
38
34
SOA1
SOA2
I
LM
VDS= 0.4 V
DSS
, IDS= PD/ 0.4 V
DSS
, t = 1 Sec
IDS= IDS[Cont.] , VDS= PD/ ID[Cont.] , t = 1 Sec
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
W
A
Characteristic / Test Conditions. Min. Typ. Max. Unit
0.53
30
300
R
q
JC
R
q
JA
T
L
Junction to Case
Junction to Ambient
Max. Lead Temperature for Soldering Conditions: 0.065
” from Case for 10 sec.
°C/W
°C/W
°C
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
SAFE OPERATING AREA CHARACTERISTICS
THERMAL CHARACTERISTICS
(T
case
=25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS= 0V
VDS= 25V
f = 1MHz
VGS= 10V
ID= ID[Cont.]
VDD= 0.5 V
DSS
VDD= 0.5 V
DSS
ID= ID[Cont.]
VGS= 15V
RG= 1.8
W
pF
nC
ns
2460 2950
360 500
105 160
90 130
9.3 14
47 70
15 30
16 32
64 95
24 48
SML1001R1AN / SML901R1AN
SML1001R3AN / SML901R3AN
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