Semelab Plc IRFY430 Datasheet

IRFY430M
IRFY430M

Prelim. 6/99

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current (VGS= 0 , T

case

= 25°C)

I

D

Continuous Drain Current (VGS= 0 , T

case

= 100°C)

I

DM

Pulsed Drain Current

1

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

T

J

, T

stg

Operating and Storage Temperature Range

T

L

Package Mounting Surface Temperature (for 5 sec)

R

q

JC

Thermal Resistance Junction to Case

±20V

3.7A

2.4A
14A

45W

0.36W/°C

–55 to 150°C

300°C

1.67°C/W max.

MECHANICAL DATA

Dimensions in mm (inches)

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

TO–220M – Metal Package

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

N–CHANNEL

POWER MOSFET

FOR HI–REL

APPLICATIONS

FEATURES

• HERMETICALLY SEALED TO–220 METAL
PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

• SCREENING OPTIONS AVAILABLE

• ALL LEADS ISOLATED FROM CASE

Pin 1 – Gate Pin 2 – Drain Pin 3 – Source

Pin 1 – Drain Pin 2 – Source Pin 3 – Gate

V

DSS

500V

I

D(cont)

3.7A

R

DS(on)

1.6

WW

WW

IRFY430

IRFY430M

4.70

0.70

0.90

5.00

16.38

16.89

10.41

10.67

3.56

Dia.

3.81

13.39

13.64

10.41

10.92

123

12.70

19.05

0.89

1.14

2.54
BSC

2.65

2.75

Parameter Test Conditions Min. Typ. Max. Unit

SOURCE – DRAIN DIODE CHARACTERISTICS

IRFY430M
IRFY430M

Prelim. 6/99

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 2.4A
VGS= 10V ID= 3.7A
VDS= V

GS

ID= 250mA

VDS³

15V IDS= 2.4A

VGS= 0 VDS= 0.8BV

DSS

TJ= 125°C
VGS= 20V
VGS= –20V

VGS= 0
VDS= 25V
f = 1MHz
VGS= 10V ID=3.7A
VDS= 0.5BV

DSS

VGS= 10V ID= 3.7A
VDS= 0.5BV

DSS

VDD= 250V
ID=3.7A
RG= 7.5

W

VGS= 10V

IS= 3.7A TC= 25°C
VGS= 0
IS= 3.7A TJ= 25°C
di/ dt£

100A/ms VDD£

50V

ELECTRICAL CHARACTERISTICS (T

amb

= 25°C unless otherwise stated)

V

V/°C

W

V

S(

W

m

A

nA

pF

nC

nC

ns

A

V

ns

m

C

nH

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance

1

Gate Threshold Voltage
Forward Transconductance

1

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge

1

Gate – Source Charge

1

Gate – Drain (“Miller”) Charge

1

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

2

Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge
Forward Turn–On Time

500

0.78

1.6

1.84

2 4

1.5
25

250
100

–100

610
135

65

19.8 29.5

2.2 4.6

5.5 19.7
35
30
55
30

3.7
14

1.4

900

7.0

Negligible

8.7

8.7

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

L

D

L

S

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width £300ms,

d £

2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

Internal Drain Inductance

(6mm down drain lead to centre of die)

Internal Source Inductance (6mm down source lead to centre of source bond pad)

PACKAGE CHARACTERISTICS

(W)