Semelab Plc IRFY130 Datasheet

IRFY130

Prelim.4/98

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current @ T

case

= 25°C

I

D

Continuous Drain Current @ T

case

= 100°C

I

DM

Pulsed Drain Current

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

T

J

, T

stg

Operating and Storage Temperature Range

R

q

JC

Thermal Resistance Junction to Case

R

q

JA

Thermal Resistance Junction to Ambient

±20V

11A

7A

44A

45W

0.36W/°C

–55 to 150°C

2.8°C/W max.
80°C/W max.

MECHANICAL DATA

Dimensions in mm (inches)

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

TO–220M – Metal Package

N–CHANNEL

POWER MOSFET

FOR HI–REL

APPLICATIONS

FEATURES

• HERMETICALLY SEALED TO–220 METAL
PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

• SCREENING OPTIONS AVAILABLE

• ALL LEADS ISOLATED FROM CASE

Pad 1 – Gate Pad 2 – Drain Pad 3 – Source

V

DSS

100V

I

D(cont)

11A

R

DS(on)

0.19

WW

WW

4.70

0.70

0.90

5.00

16.38

16.89

10.41

10.67

3.56

Dia.

3.81

13.39

13.64

10.41

10.92

123

12.70

19.05

0.89

1.14

2.54
BSC

2.65

2.75

IRFY130

Prelim.4/98

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 7A
VGS= 10V ID= 11A
VDS= V

GS

ID= 250mA

VDS³

15V IDS= 7A

VGS= 0 VDS= 0.8BV

DSS

TJ= 125°C
VGS= 20V
VGS= –20V

VGS= 0
VDS= 25V
f = 1MHz
VGS= 10V ID= 11A
VDS= 0.5BV

DSS

ID= 11A
VDS= 0.5BV

DSS

VDD= 50V
I

D

= 11A

RG= 7.5

W

IS= 11A TJ= 25°C
V

GS

= 0

I

S

= 11A TJ= 25°C

di/ dt£

100A/msVDD£

50V

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge
Gate – Source Charge

Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge

100

0.1

0.19

0.22
24
3

25
250
100

-100

650
240

44

12.8 28.5

1.0 6.3

3.8 16.6
30
75
40
45

11
43

1.5

240

3

8.7

8.7

V

V/°C

W

V

S(

W

m

A

nA

pF

nC

nC

ns

A

V

ns

m

C

nH

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

L

D

L

S

STATIC ELECTRICAL RATINGS

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(from 6mm down drain lead pad to centre of die)

Internal Source Inductance (from 6mm down source lead to centre of source bond pad)

PACKAGE CHARACTERISTICS

(W)