Semelab Plc IRFY044 Datasheet
MECHANICAL DATA
Dimensions in mm (inches)
IRFY044
N–CHANNEL
4.70
0.70
0.90
5.00
16.38
16.89
10.41
10.67
3.56
Dia.
3.81
13.39
13.64
10.41
10.92
123
12.70
19.05
0.89
1.14
2.54
BSC
2.65
2.75
TO–220M – Metal Package
Pad 1 – Gate Pad 2 – Drain Pad 3 – Source
POWER MOSFET
FOR HI–REL
APPLICATIONS
V
DSS
I
D(cont)
R
DS(on)
FEATURES
• HERMETICALLY SEALED TO–220 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
60V
20A
0.035
ΩΩ
ABSOLUTE MAXIMUM RATINGS (T
V
I
I
I
P
GS
D
D
DM
D
Gate – Source Voltage
Continuous Drain Current @ TC= 25°C
Continuous Drain Current @ TC= 100°C
Pulsed Drain Current
Power Dissipation @ TC= 25°C
= 25°C unless otherwise stated)
C
Linear Derating Factor
T
R
R
, T
J
θJC
θJA
Operating and Storage Temperature Range
stg
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
±20V
20A
20A
128A
60W
0.48W/°C
–55 to 150°C
2.1°C/W max.
80°C/W max.
Prelim. 11/95
IRFY044
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
STATIC ELECTRICAL RATINGS
BV
∆BV
∆T
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
Drain – Source Breakdown Voltage
DSS
Temperature Coefficient of
DSS
Breakdown Voltage
J
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate
Reverse Gate
– Source Leakage
– Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
PACKAGE CHARACTERISTICS
Internal Drain Inductance (from 6mm down drain lead pad to centre of die)
Internal Source Inductance (from 6mm down source lead to centre of source bond pad)
VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 20A
VDS= V
VDS≥ 15V ID= 20A
VGS= 0 VDS= 0.8BV
VGS= 20V
VGS= –20V
VGS= 0
VDS= 25V
f = 1MHz
VGS= 10V
ID= 20A
VDS= 0.5BV
VGS= 10V
VDD= 30V
ID= 20A
RG= 9.1Ω
IS= 20A TJ= 25°C
VGS= 0
IF= 20A TJ= 25°C
di/ dt≤ 100A/µsVDD≤ 50V
= 25°C unless otherwise stated)
C
GS
ID= 250µA
DSS
TJ= 125°C
DSS
60
0.68
0.035
24
17
V
V/°C
Ω
V
(Ω)
S(Ω
25
µA
250
100
nA
–100
2400
1100
pF
230
39 88
6.7 15
nC
18 52
23
130
ns
81
79
20
A
128
2.5
220
1.6
V
ns
µC
8.7
nH
8.7
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/95
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