Semelab Plc IRFN9240SMD Datasheet

IRFN9240SMD

Prelim. 7/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current (VGS= 0 , T

case

= 25°C)

I

D

Continuous Drain Current (VGS= 0 , T

case

= 100°C)

I

DM

Pulsed Drain Current

1

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

E

AS

Single Pulse Avalanche Energy

2

dv/dt Peak Diode Recovery

3

TJ, T

stg

Operating and Storage Temperature Range

T

L

Package Mounting Surface Temperature (for 5 sec)

R

q

JC

Thermal Resistance Junction to Case

R

q

J–PCB

Thermal Resistance Junction to PCB (Typical)

±20V
–8.0A
–5.0A

–32A

75W

0.6W/°C
500mJ

–5.5V/ns

–55 to 150°C

300°C

1.67°C/W
4°C/W

MECHANICAL DATA

Dimensions in mm (inches)

)
)

P–CHANNEL

POWER MOSFET

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

FEATURES

• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE

• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

• HIGH PACKING DENSITIES

SMD1 PACKAGE

Pad 1 – Source Pad 2 – Drain Pad 3 – Gate

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) @ VDD= –50V , L ³11.7mH , RG= 25W, Peak IL= –8A , Starting TJ= 25°C

3) @ ISD£

–8A , di/dt £–150A/ms , VDD£

BV

DSS

, TJ£

150°C , SUGGESTED RG= 9.1

W

Note: IRFxxxSM also available with

pins 1 and 3 reversed.

V

DSS

–200V

I

D(cont)

–8A

R

DS(on)

0.051

WW

WW

0.89

(0.035)

min.

3.70 (0.146)

3.41 (0.134)

4.14 (0.163)

3.84 (0.151)

min.

0.76
(0.030)

10.69 (0.421)

10.39 (0.409)

3.70 (0.146)

3.41 (0.134)

13

2

9.67 (0.381)

9.38 (0.369)

11.58 (0.456)

11.28 (0.444)

16.02 (0.631)

15.73 (0.619)

3.60 (0.142)
Max.

0.50 (0.020

0.26 (0.010

IRFN9240SMD

Prelim. 7/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

VGS= 0 ID= –1mA
Reference to 25°C
ID= –1mA
VGS= –10V ID= –5A
VGS= –10V ID= –8A
VDS= V

GS

ID= –250mA

VDS³

–15V IDS= –5A

VGS= 0 VDS= 0.8BV

DSS

TJ= 125°C
VGS= –20V
VGS= 20V

VGS= 0
VDS= –25V
f = 1MHz
VGS= –10V ID= –8A
VDS= 0.5BV

DSS

ID= –8A
VDS= 0.5BV

DSS

VDD= –100V
I

D

= –8A

RG= 9.1

W

IS= –8A TJ= 25°C
V

GS

= 0

I

F

= –8A TJ= 25°C

di/ dt£

–100A/ms VDD£

–50V

ELECTRICAL CHARACTERISTICS (T

amb

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance

1

Gate Threshold Voltage
Forward Transconductance

1

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge

1

Gate – Source Charge

1

Gate – Drain (“Miller”) Charge

1

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

2

Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge
Forward Turn–On Time

–200

–0.020

0.51

0.52

–2 –4

4.0
–25

–250
–100

100

1200

570

81

28 60

3.0 15

4.5 38

35
85
85
65

–8

–32

–4.6

440

7.2

negligible

0.8

2.8

V

V/°C

W

V

S(

W

m

A

nA

pF

nC

nC

ns

A

V

ns

m

C

nH

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

L

D

L

S

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(from centre of drain pad to die)

Internal Source Inductance (from centre of source pad to end of source bond wire)

PACKAGE CHARACTERISTICS

(W)