Semelab Plc IRFN340SMD Datasheet

IRFN340SMD

Prelim. 7/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current (VGS= 0 , T

case

= 25°C)

I

D

Continuous Drain Current (VGS= 0 , T

case

= 100°C)

I

DM

Pulsed Drain Current

1

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

E

AS

Single Pulse Avalanche Energy

2

I

AR

Avalanche Energy

1

E

AR

Repetitive Avalanche Energy

1

dv/dt Peak Diode Recovery

3

TJ, T

stg

Operating and Storage Temperature Range

T

L

Package Mounting Surface Temperature (for 5 sec)

R

q

JC

Thermal Resistance Junction to Case

R

q

J–PCB

Thermal Resistance Junction to PCB (Typical)

±20V

10A

6A

40A

125W

1.0W/°C
650mJ

10A

12.5mJ

4.0V/ns

–55 to 150°C

300°C

1.0°C/W

TBD

MECHANICAL DATA

Dimensions in mm (inches)

)
)

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

SMD1 PACKAGE

Notes 1) Repetitive Rating – Pulse width limited by maximum junction temperature.

2) @ V

DD

= 50V,Starting TJ= 25°C, EAS=[0.5 * L* (I

L

2

) * [BV

DSS

/(BV

DSS-VDD

)], Peak IL= 10A VGS= 10V,

2) 25 £R

G

£

200

W

3) I

SD

£

10A , di/dt £120A/ms , VDD£

BV

DSS

, TJ£

150°C

4) Pulse Test: Pulse Width £300ms, d£2%

N–CHANNEL

POWER MOSFET

FEATURES

• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE

• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

• HIGH PACKING DENSITIES

Pad 1 – Source Pad 2 – Drain Pad 3 – Gate

Note: IRFxxxSM also available with

pins 1 and 3 reversed.

BV

DSS

400V

I

D(cont)

10A

R

DS(on)

0.55

WW

WW

0.89

(0.035)

min.

3.70 (0.146)

3.41 (0.134)

4.14 (0.163)

3.84 (0.151)

min.

0.76
(0.030)

10.69 (0.421)

10.39 (0.409)

3.70 (0.146)

3.41 (0.134)

13

2

9.67 (0.381)

9.38 (0.369)

11.58 (0.456)

11.28 (0.444)

16.02 (0.631)

15.73 (0.619)

3.60 (0.142)
Max.

0.50 (0.020

0.26 (0.010

IRFN340SMD

Prelim. 7/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 6A
VGS= 10V ID= 10A
VDS= V

GS

ID= 250mA

VDS³

15V IDS= 6A

VGS= 0 VDS= 0.8BV

DSS

TJ= 125°C
VGS= 20V
VGS= –20V

VGS= 0
VDS= 25V
f = 1MHz

VGS= 10V ID= 10A
VDS= 0.5BV

DSS

VDD= 200V ID= 10A
R

G

= 9.1

W

VGS= 10V

I

S

= 10A TJ= 25°C

V

GS

= 0

I

F

= 10A TJ= 25°C

di/ dt£

100A/msVDD£

50V

ELECTRICAL CHARACTERISTICS (T

j

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance

4

Gate Threshold Voltage
Forward Transconductance

4

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge

1

Gate – Source Charge

1

Gate – Drain (“Miller”) Charge

1

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

1

Diode Forward Voltage

4

Reverse Recovery Time

4

Reverse Recovery Charge

4

Forward Turn–On Time

400

0.46

0.55

0.70

24

4.9
25

250
100

–100

1400
3500
2300

32 65

2.2 10.0

13.8 40.5

2.5
92
79
58

10
40

1.5

600

5.6

Negligible

2.0

6.5

V

V/°C

W

V

S(

W

m

A

nA

pF

nC

ns

A

V

ns

m

C

nH

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

L

D

L

S

STATIC ELECTRICAL RATINGS

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(from centre of drain pad to die)

Internal Source Inductance (from centre of source pad to end of source bond wire)

PACKAGE CHARACTERISTICS

(W)