Semelab Plc IRFN250SMD Datasheet

IRFN250SMD

Prelim. 7/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current (VGS= 0 , T

case

= 25°C)

I

D

Continuous Drain Current (VGS= 0 , T

case

= 100°C)

I

DM

Pulsed Drain Current

1

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

E

AS

Single Pulse Avalanche Energy

2

dv/dt Peak Diode Recovery

3

TJ, T

stg

Operating and Storage Temperature Range

T

L

Package Mounting Surface Temperature (for 5 sec)

R

q

JC

Thermal Resistance Junction to Case

R

q

J–PCB

Thermal Resistance Junction to PCB (Typical)

±20V

22A
14A
88A

100W

0.8W/°C
500mJ

5.0V/ns

–55 to 150°C

300°C

1.25°C/W
3°C/W

MECHANICAL DATA

Dimensions in mm (inches)

)
)

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

SMD PACKAGE

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) @ VDD= 50V , L ³1.5mH , RG= 25W, Peak IL= 22A , Starting TJ= 25°C

3) @ ISD£

22A , di/dt £190A/ms , VDD£

BV

DSS

, TJ£

150°C , SUGGESTED RG= 2.35

W

N–CHANNEL

POWER MOSFET

FEATURES

• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE

• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

• HIGH PACKING DENSITIES

Pad 1 – Source Pad 2 – Drain Pad 3 – Gate

Note: IRFxxxSM also available with

pins 1 and 3 reversed.

V

DSS

200V

I

D(cont)

14A

R

DS(on)

0.100

WW

WW

0.89

(0.035)

min.

3.70 (0.146)

3.41 (0.134)

4.14 (0.163)

3.84 (0.151)

min.

0.76
(0.030)

10.69 (0.421)

10.39 (0.409)

3.70 (0.146)

3.41 (0.134)

13

2

9.67 (0.381)

9.38 (0.369)

11.58 (0.456)

11.28 (0.444)

16.02 (0.631)

15.73 (0.619)

3.60 (0.142)
Max.

0.50 (0.020

0.26 (0.010

IRFN250SMD

Prelim. 7/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 14A
VGS= 10V ID= 22A
VDS= V

GS

ID= 250mA

VDS³

15V IDS= 14A

VGS= 0 VDS= 0.8BV

DSS

TJ= 125°C
VGS= 20V
VGS= –20V

VGS= 0
VDS= 25V
f = 1MHz
VGS= 10V ID= 22A
VDS= 0.5BV

DSS

ID= 22A
VDS= 0.5BV

DSS

VDD= 100V
I

D

= 22A

RG= 2.35

W

IS= 22A TJ= 25°C
V

GS

= 0

I

F

= 22A TJ= 25°C

di/ dt£

100A/msVDD£

50V

ELECTRICAL CHARACTERISTICS (T

amb

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance

1

Gate Threshold Voltage
Forward Transconductance

1

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge

1

Gate – Source Charge

1

Gate – Drain (“Miller”) Charge

1

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

2

Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge
Forward Turn–On Time

200

0.29

0.100

0.105
24
9

25
250
100

–100

3500

700
110

55 115

822

30 60

35
190
170
130

22

88

1.9

950

9.0

Negligible

0.8

2.8

V

V/°C

W

V

S(

W

m

A

nA

pF

nC

nC

ns

A

V

ns

m

C

nH

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

L

D

L

S

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(from centre of drain pad to die)

Internal Source Inductance (from centre of source pad to end of source bond wire)

PACKAGE CHARACTERISTICS

(W)