Semelab Plc IRFN044SMD Datasheet

IRFN044SMD

Prelim. 7/00

LAB

SEME

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current (VGS= 0 , T

case

= 25°C)

I

D

Continuous Drain Current (VGS= 0 , T

case

= 100°C)

I

DM

Pulsed Drain Current

1

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

E

AS

Single Pulse Avalanche Energy

2

dv/dt Peak Diode Recovery

3

TJ, T

stg

Operating and Storage Temperature Range

T

L

Package Mounting Surface Temperature (for 5 sec)

R

q

JC

Thermal Resistance Junction to Case

R

q

J–PCB

Thermal Resistance Junction to PCB (Typical)

±20V

34A
21A

136A

75W

0.6W/°C
340mJ

4.5V/ns

–55 to 150°C

300°C

1.67°C/W
4°C/W

MECHANICAL DATA

)
)

N–CHANNEL

POWER MOSFET

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

FEATURES

• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE

• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

• HIGH PACKING DENSITIES

SMD1

Pad 1 – Source Pad 2 – Drain Pad 3 – Gate

Note: IRFxxxSM also available with

pins 1 and 3 reversed.

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) @ VDD= 25V , L ³0.3mH , RG= 25W, Peak IL= 34A , Starting TJ= 25°C

3) @ ISD£

34A , di/dt £100A/ms , VDD£

BV

DSS

, TJ£

150°C , SUGGESTED RG= 9.1

W

V

DSS

60V

I

D(cont)

34A

R

DS(on)

0.040

WW

WW

0.89

(0.035)

min.

3.70 (0.146)

3.41 (0.134)

3.70 (0.146)

3.41 (0.134)

3.60 (0.142)
Max.

13

4.14 (0.163)

3.84 (0.151)

min.

0.76
(0.030)

10.69 (0.421)

10.39 (0.409)

2

9.67 (0.381)

9.38 (0.369)

11.58 (0.456)

11.28 (0.444)

16.02 (0.631)

15.73 (0.619)

0.50 (0.020

0.26 (0.010

IRFN044SMD

Prelim. 7/00

LAB

SEME

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 21A
VGS= 10V ID= 34A
VDS= V

GS

ID= 250mA

VDS³

15V IDS= 21A

VGS= 0 VDS= 0.8BV

DSS

TJ= 125°C
VGS= 20V
VGS= –20V

VGS= 0
VDS= 25V
f = 1MHz
VGS= 10V ID= 34A
VDS= 0.5BV

DSS

ID= 34A
VDS= 0.5BV

DSS

VDD= 30V
I

D

= 34A

RG= 9.1

W

IS= 34A TJ= 25°C
V

GS

= 0

I

F

= 34A TJ= 25°C

di/ dt£

100A/msVDD£

50V

ELECTRICAL CHARACTERISTICS (T

amb

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance

1

Gate Threshold Voltage
Forward Transconductance

1

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge

1

Gate – Source Charge

1

Gate – Drain (“Miller”) Charge

1

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

2

Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge
Forward Turn–On Time

60

0.68

0.040

0.050

24

17

25
250
100

–100

2400
1100

230

39 88

6.7 15
18 52

23

130

81
79

34

136

2.5

220

1.6

Negligible

0.8

2.8

V

V/°C

W

V

S(

W

m

A

nA

pF

nC

nC

ns

A

V

ns

m

C

nH

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

L

D

L

S

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(from centre of drain pad to die)

Internal Source Inductance (from centre of source pad to end of source bond wire)

PACKAGE CHARACTERISTICS

(W)