Semelab Plc IRFM450 Datasheet
MECHANICAL DATA
Dimensions in mm (inches)
IRFM450
N–CHANNEL
3.53 (0.139)
3.78 (0.149)
16.89 (0.665)
17.40 (0.685)
30.35 (1.195)
31.40 (1.235)
13.59 (0.535)
Dia.
13.84 (0.545)
13.59 (0.535)
13.84 (0.545)
123
3.81 (0.150)
BSC
20.07 (0.790)
0.89 (0.035)
1.14 (0.045)
20.32 (0.800)
6.32 (0.249)
6.60 (0.260)
3.81 (0.150)
BSC
TO–254AA – Metal Package
Pin 1 – Drain Pin 2 – Source Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS (T
V
GS
I
D
I
D
I
DM
P
D
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery
Gate – Source Voltage
Continuous Drain Current (VGS= 10V , T
Continuous Drain Current (VGS= 10V , T
Pulsed Drain Current
Power Dissipation @ T
1
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
1
Repetitive Avalanche Energy
3
2
1
POWER MOSFET
1.02 (0.040)
1.27 (0.050)
FEATURES
• HERMETICALLY SEALED ISOLATED
PACKAGE
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• ALSO AVAILABLE IN TO–220 METAL AND
SURFACE MOUNT PACKAGES
• EASE OF PARALLELING
= 25°C unless otherwise stated)
case
case
case
V
DSS
I
D(cont)
R
DS(on)
= 25°C)
= 100°C)
500V
12A
0.415
±20V
12A
8A
48A
150W
1.2W/°C
750mJ
12A
15mJ
3.5V/ns
ΩΩ
TJ, T
stg
T
L
R
θJC
R
θCS
R
θJA
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) @ VDD= 50V , L ≥ 9.4mH , RG= 25Ω , Peak IL= 12A , Starting TJ= 25°C
3) @ ISD≤ 12A , di/dt ≤ 130A/µs , VDD≤ BV
Operating and Storage Temperature Range
1
Lead Temperature measured
/
” (1.6mm) from case for 10 sec.
16
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink (Typical)
Thermal Resistance Junction to Ambient
, TJ≤ 150°C , Suggested RG= 2.35Ω
DSS
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
–55 to 150°C
300°C
0.83°C/W
0.21°C/W
48°C/W
Prelim. 10/95
IRFM450
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
STATIC ELECTRICAL RATINGS
BV
∆BV
∆T
Drain – Source Breakdown Voltage
DSS
Temperature Coefficient of
DSS
Breakdown Voltage
J
Static Drain – Source On–State
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate
Reverse Gate
2
2
– Source Leakage
– Source Leakage
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
C
DC
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
I
I
V
t
Q
t
S
SM
SD
rr
rr
on
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
1
2
2
Reverse Recovery Charge
Forward Turn–On Time
2
PACKAGE CHARACTERISTICS
L
D
L
S
Internal Drain Inductance Measured from 6mm down drain lead to centre of die
Internal Source Inductance Measured from 6mm down source lead to source bond pad
1) Repetitive Rating – Pulse width limited by Maximum
Junction Temperature
VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 8A
VGS= 10V ID= 12A
VDS= V
VDS≥ 15V IDS= 8A
VGS= 0 VDS= 0.8BV
VGS= 20V
VGS= –20V
VGS= 0
VDS= 25V
f = 1MHz
VGS= 10V
ID= 12A
VDS= 0.5BV
VDD= 250V
ID= 12A
RG= 2.35Ω
IS= 12A TJ= 25°C
VGS= 0
IF= 12A TJ= 25°C
di/ dt≤ 100A/µsVDD≤ 50V
= 25°C unless otherwise stated)
amb
GS
ID= 250µA
DSS
TJ= 125°C
DSS
Notes
2) Pulse Test: Pulse Width ≤ 300µs, δ≤2%
*ISCurrent limited by pin diameter.
500
0.68
V
V/°C
0.415
Ω
0.515
24
6.5
V
(Ω)
S(Ω
25
µA
250
100
nA
–100
2700
600
pF
240
12
55 120
519
nC
27 70
35
190
ns
170
130
12
A
48
1.7
1600
14
V
ns
µC
Negligible
8.7
nH
8.7
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
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