Semelab Plc IRFM350 Datasheet

Prelim. 05/00

IRFM350

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current @ VGS= 10V , TC = 25°C

@ V

GS

= 10V , TC = 100°C

I

DM

Pulsed Drain Current

P

D

Max. Power Dissipation @ TC = 25°C
Linear Derating Factor

I

L

Avalanche Current , Clamped

1

dv / dt Peak Diode Recovery

2

R

q

JC

Thermal Resistance Junction – Case

R

q

JA

Thermal Resistance Junction – Ambient

R

q

CS

Thermal Resistance Case – Sink

T

J

, T

STG

Operating Junction and Storage Temperature Range

T

L

Lead Temperature (1.6mm from case for 10s)

±20V

14A

9.0A
56A

150W

1.2W / °C
14A

4V / ns

0.83°C / W
48°C / W

0.21°C / W typ.
–55 to 150°C

300°C

MECHANICAL DATA

Dimensions in mm (inches)

TO–254AA – Isolated Metal Package

Pin 1 – Drain Pin 2 – Source Pin 3 – Gate

ABSOLUTE MAXIMUM RATINGS (T

C

= 25°C unless otherwise stated)

1) VDD= 50V , Starting TJ= 25°C , L ³1mH , RG= 25W, Peak IL= 27.4A

2) ISD£

27.4A , di/dt £190A / mS , VDD£

BV

DSS

, TJ£

150°C , Suggested RG= 2.35

W

N–CHANNEL

POWER MOSFET

FEATURES

• N–CHANNEL MOSFET

• HIGH VOLTAGE

• INTEGRAL PROTECTION DIODE

• HERMETIC ISOLATED TO-254 PACKAGE

• CERAMIC SURFACE MOUNT PACKAGE
OPTION

V

DSS

400V

I

D(cont)

14A

R

DS(on)

0.315

WW

WW

13.59 (0.535)

3.53 (0.139)

3.78 (0.149)

Dia.

13.84 (0.545)

6.32 (0.249)

6.60 (0.260)

1.02 (0.040)

1.27 (0.050)

20.07 (0.790)

20.32 (0.800)

3.81 (0.150)
BSC

30.35 (1.195)

31.40 (1.235)

16.89 (0.665)

17.40 (0.685)

13.59 (0.535)

13.84 (0.545)

3.81 (0.150)

123

0.89 (0.035)

1.14 (0.045)

BSC

Prelim. 05/00

IRFM350

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 9A
VGS= 10V ID= 14A
VDS= V

GS

ID= 250mA

VDS³

15V IDS= 9A

VGS= 0 VDS= 0.8BV

DSS

TJ= 125°C
VGS= 20V
VGS= –20V

VGS= 0
VDS= 25V
f = 1MHz

VGS= 10V
ID= 14A
VDS= 0.5BV

DSS

VDD= 200V
ID= 14A
RG= 2.35

W

IS= 14A TJ= 25°C
VGS= 0
IF= 14A TJ= 25°C
di/ dt£

100A/msVDD£

50V

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance

2

Gate Threshold Voltage
Forward Transconductance

2

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

1

Diode Forward Voltage

2

Reverse Recovery Time

2

Reverse Recovery Charge

2

Forward Turn–On Time

400

0.46

0.315

0.415
24
6

25
250
100

–100

2600

660
250

12

52 110

518

25 65

35
190
170
130

14

56

1.7

1200

11

Negligible

8.7

8.7

V

V/°C

W

V

S(

W

m

A

nA

pF

nC

ns

A

V

ns

m

C

nH

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

C

DC

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

L

D

L

S

STATIC ELECTRICAL RATINGS

1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature

2) Pulse Test: Pulse Width £300ms, d£2%.

Notes

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

Measured from 6mm down drain lead to centre of die

Internal Source Inductance Measured from 6mm down source lead to source bond pad

PACKAGE CHARACTERISTICS

(W)