Semelab Plc IRFM250D Datasheet
IRFM
V
GS
Gate – Source Voltage
I
D
Continuous Drain Current @ VGS= 10V , TC = 25°C
@ V
GS
= 10V , TC = 100°C
I
DM
Pulsed Drain Current
P
D
Max. Power Dissipation @ TC = 25°C
Linear Derating Factor
I
L
Avalanche Current , Clamped
1
dv / dt Peak Diode Recovery
2
R
q
JC
Thermal Resistance Junction – Case
R
q
JA
Thermal Resistance Junction – Ambient
R
q
CS
Thermal Resistance Case – Sink
T
J
, T
STG
Operating Junction and Storage Temperature Range
T
Lead Temperature (1.6mm from case for 10s)
±20V
27.4A
17A
110A
150W
1.2W / °C
27.4A
5.5V / ns
0.83°C / W
48°C / W
0.21°C / W typ.
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
20.32 (.800)
20.06 (.790)
3.81 (.150) BS C
9.52 (.375)
8.76 (.345)
1.27 (.050)
1.02 (.040)
4.95 (.195)
4.19 (.165)
13.84 (.545)
13.59 (.535)
R 1.01 (.040) M IN
6.60 (.260)
6.32 (.249)
Source
3.78 (.149)
3.53 (.139)
6.91 (.272)
6.81 (.268)
Drain
Dia Typ
0.89 (0.35) 3 Leads
3.81 (.150) BS C
16.89 (.665)
1.14 (.045)
17.40 (.685)
Gate
13.84 (.545)
13.59 (.535)
DIA
TO–254 Metal Package
Pin 1 – Drain Pin 2 – Source Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise stated)
N–CHANNEL
POWER MOSFET
FEATURES
• N–CHANNEL MOSFET
• HIGH VO LTAGE
• INTEGRAL PROTECTION DIODE
• HERMETIC ISOLATED TO-254 PAC
• CERAMIC SURFACE MOUNT PACK
OPTION
V
DSS
200V
I
D(cont)
27.4A
R
DS(on)
0.100
WW
WW
IRFM
Parameter Test Conditions Min. Typ. Max
VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 17A
V
GS
= 10V ID= 27.4A
V
DS
= V
GS
ID= 250mA
V
DS
³
15V IDS= 27.4A
V
GS
= 0 VDS= 0.8BV
DSS
TJ= 125°C
VGS= 20V
V
GS
= –20V
VGS= 0
V
DS
= 25V
f = 1MHz
VGS= 10V
I
D
= 27.4A
V
DS
= 0.5BV
DSS
VDD= 100V
ID= 27.4A
R
G
= 2.35
W
I
S
= 27.4A TJ= 25°C
VGS= 0
IF= 27.4A TJ= 25°C
d
i
/ d
t
£
100A/msV
DD
£
50V
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
2
Gate Threshold Voltage
Forward Transconductance
2
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward Turn–On Time
200
0.28
0.100
0.105
24
9
25
250
100
–100
3500
700
110
12
55 115
822
30 60
35
190
170
130
27.4
110
1.9
950
9.0
Negligible
8.7
8.7
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
C
DC
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
Measured from 6mm down drain lead to centre of die
Internal Source Inductance Measured from 6mm down source lead to source bond pad
PACKAGE CHARACTERISTICS
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