Semelab Plc IRFM150 Datasheet
2N7224
IRFM150
LAB
SEME
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website http://www.semelab.co.uk
2/99
V
GS
Gate – Source Voltage
I
D
Continuous Drain Current (VGS= 10V , T
case
= 25°C)
I
D
Continuous Drain Current (VGS= 10V , T
case
= 100°C)
I
DM
Pulsed Drain Current
1
P
D
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
E
AS
Single Pulse Avalanche Energy
2
dv/dt Peak Diode Recovery
3
TJ, T
stg
Operating and Storage Temperature Range
R
q
JC
Thermal Resistance Junction to Case
R
q
JCS
Thermal Resistance Case to Sink (Typical)
R
q
JCA
Thermal Resistance Junction-to-Ambient
±20V
34A
21A
136A
150W
1.2W/°C
150mJ
5.5V/ns
–55 to 150°C
0.83°C/W
0.21°C/W
48°C/W
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
TO–254AA – Package
Notes
1) Pulse Test: Pulse Width £300ms, d£2%
2) @ VDD= 25V , L ³200mH , RG= 25W, Peak IL= 34A , Starting TJ= 25°C
3) @ ISD£
34A , di/dt £70A/ms , VDD£
BV
DSS
, TJ£
150°C , SUGGESTED RG= 2.35
W
N–CHANNEL
POWER MOSFET
FEATURES
• REPETITIVE AVALANCHE RATING
• ISOLATED AND HERMETICALLY SEALED
• ALTERNATIVE TO TO-3 PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• EASE OF PARALLELING
Pin 1 – Drain Pin 2 – Source Pin 3 – Gate
V
DSS
100V
I
D(cont)
34A
R
DS(on)
0.070
WW
WW
3.53 (0.139)
3.78 (0.149)
16.89 (0.665)
17.40 (0.685)
30.35 (1.195)
31.40 (1.235)
13.59 (0.535)
Dia.
13.84 (0.545)
3.81 (0.150)
13.59 (0.535)
13.84 (0.545)
123
0.89 (0.035)
1.14 (0.045)
BSC
20.07 (0.790)
20.32 (0.800)
6.32 (0.249)
6.60 (0.260)
3.81 (0.150)
BSC
1.02 (0.040)
1.27 (0.050)
2N7224
IRFM150
LAB
SEME
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website http://www.semelab.co.uk
2/99
Parameter Test Conditions Min. Typ. Max. Unit
VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 21A
VGS= 10V ID= 34A
VDS= V
GS
ID= 250mA
VDS³
15V IDS= 21A
VGS= 0 VDS= 0.8BV
DSS
TJ= 125°C
VGS= 20V
VGS= –20V
VGS= 0
VDS= 25V
f = 1MHz
VGS= 10V ID= 34A
VDS= 0.5BV
DS
ID=34A
VDS= 0.5BV
DS
VDD= 50V
ID= 34A
RG= 2.35
W
IS= 34A TJ= 25°C
VGS= 0
IF= 34A TJ= 25°C
di/ dt£
100A/ms VDD£
50V
ELECTRICAL CHARACTERISTICS (T
amb
= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
100
0.13
0.070
0.081
2 4
9
25
250
100
–100
3700
1100
200
50 125
8 22
15 65
35
190
170
130
34
136
1.8
500
2.9
Negligible
8.7
8.7
V
V/°C
W
V
S(
W
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width £300ms,
d £
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance (from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
(W)
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