Semelab Plc IRFE9230 Datasheet

MECHANICAL DATA

Dimensions in mm (inches)

9.14 (0.360)

1.27 (0.050)

1.07 (0.040)

7.62 (0.300)

7.12 (0.280)

11
10

9
8

8.64 (0.340)

13

12

7

1.39 (0.055)

1.15 (0.045)

15

16

14

56

34

1.65 (0.065)

1.40 (0.055)

17
18

1
2

1.39 (0.055)

1.02 (0.040)

0.76 (0.030)

0.51 (0.020)

0.33 (0.013)

0.08 (0.003)

0.43 (0.017)

0.18 (0.007

Rad.

Rad.

≈2.16 (0.085)

P–CHANNEL

POWER MOSFET

V

DSS

I

D(cont)

R

DS(on)

FEATURES

IRFE9230

-200V

-3.6A

0.825

ΩΩ

LCC4

MOSFET TRANSISTOR PINS

GATE BASE 4,5

DRAIN COLLECTOR 1,2,15,16,17,18

SOURCE EMITTER 6,7,8,9,10,11,12,13

ABSOLUTE MAXIMUM RATINGS (T

V
I
I
I
P

GS
D
D
DM

D

Gate – Source Voltage
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current
Power Dissipation @ T

case

case

case
case

= 25°C

• SURFACE MOUNT

• SMALL FOOTPRINT

• HERMETICALLY SEALED

• DYNAMIC dv/dt RATING

• AVALANCHE ENERGY RATING

• SIMPLE DRIVE REQUIREMENTS

• LIGHT WEIGHT

= 25°C unless otherwise stated)

= 25°C
= 100°C

±20V
– 3.6A
– 2.2A

– 14.4A

22W

Linear Derating Factor

E

AS

Single Pulse Avalanche Energy
dv/dt Peak Diode Recovery
TJ, T

stg

Operating and Storage Temperature Range

3

2

– 55 to +150°C

Surface Temperature ( for 5 sec).

Semelab plc. Telephone [phone]. Fax [phone]. e-mail [e-mail]

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0.17W/°C
75mJ

– 5V/ns

300°C

10/98

IRFE9230

ELECTRICAL CHARACTERISTICS (T

Parameter Test Conditions Min. Typ. Max. Unit

STATIC ELECTRICAL RATINGS

BV

∆BV

∆T

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

L

D

L

S

R

θJC

R

θJPC

Drain – Source Breakdown Voltage

DSS

Temperature Coefficient of

DSS

Breakdown Voltage

J

Static Drain – Source On–State
Resistance

1

Gate Threshold Voltage
Forward Transconductance

1

Zero Gate Voltage Drain Current
Forward Gate

Reverse Gate

– Source Leakage
– Source Leakage

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

SOURCE – DRAIN DIODE CHARACTERISTICS

Continuous Source Current
Pulse Source Current

Diode Forward Voltage

2

1

Reverse Recovery Time
Reverse Recovery Charge

1

Forward Turn–On Time

PACKAGE CHARACTERISTICS

Internal Drain Inductance (measured from 6mm down drain lead to centre of die)
Internal Source Inductance (from 6mm down source lead to source bond pad)

THERMAL CHARACTERISTICS

Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board

VGS= 0 ID= –1mA
Reference to 25°C
ID= –1mA
VGS= –10V ID= –2.2A
VGS= –10V ID= –3.6A
VDS= V
VDS≥ –15V IDS= –2.2A
VGS= 0 VDS= 0.8BV

VGS= –20V
VGS= 20V

VGS= 0
VDS= –25V
f = 1MHz
VGS= –10V
ID= –3.6A
VDS= 0.5BV

VDD= –100V
ID= –3.6A
RG= 7.5Ω

IS= –3.6A TJ= 25°C
VGS= 0
IF= –3.6A TJ= 25°C
di/ dt≤ –100A/µs VDD≤ –50V

= 25°C unless otherwise stated)

case

GS

ID= –250mA

DSS

TJ= 125°C

DSS

–200

– 0.22

0.80

0.825

– 2 – 4

2.2
– 25

– 250
– 100

100

700
200

40

14.7 34.8

0.8 7.0

5.0 17

50
100
100

80

–3.6

–14.4

–6.0

400

4.0

Negligible

1.8

4.3

5.8
19

V

V/°C

Ω

V

S (É)

µA

nA

pF

nC

ns

A

V

ns

µC

nH

°C/W

Notes

1) Pulse Test: Pulse Width ≤ 300ms, δ≤2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

Semelab plc. Telephone [phone]. Fax [phone]. e-mail [e-mail]

Website http://www.semelab.co.uk

10/98