Semelab Plc IRFE9110 Datasheet

IRFE9110

1/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

MECHANICAL DATA

Dimensions in mm (inches)

LCC4

P–CHANNEL

POWER MOSFET

FEATURES

• SURFACE MOUNT

• SMALL FOOTPRINT

• HERMETICALLY SEALED

• DYNAMIC dv/dt RATING

• AVALANCHE ENERGY RATING

• SIMPLE DRIVE REQUIREMENTS

•

LIGHT WEIGHT

V

DSS

-100V

I

D(cont)

-2.2A

R

DS(on)

1.2

WW

WW

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current @ T

case

= 25°C

I

D

Continuous Drain Current @ T

case

= 100°C

I

DM

Pulsed Drain Current

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

E

AS

Single Pulse Avalanche Energy

2

dv/dt Peak Diode Recovery

3

TJ, T

stg

Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).

±20V
– 2.2A
– 1.4A
– 8.8A

11W

0.090W/°C
87mJ

– 5.5V/ns

– 55 to +150°C

300°C

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

MOSFET TRANSISTOR PINS

GATE BASE 4,5

DRAIN COLLECTOR 1,2,15,16,17,18

SOURCE EMITTER 6,7,8,9,10,11,12,13

9.14 (0.360)

1.27 (0.050)

1.07 (0.040)

7.62 (0.300)

7.12 (0.280)

11
10

9
8

8.64 (0.340)

13

12

7

1.39 (0.055)

1.15 (0.045)

15

16

14

56

34

1.65 (0.065)

1.40 (0.055)

17
18

1
2

1.39 (0.055)

1.02 (0.040)

0.76 (0.030)

0.51 (0.020)

0.33 (0.013)

0.08 (0.003)

0.43 (0.017)

0.18 (0.007

Rad.

Rad.

≈2.16 (0.085)

IRFE9110

1/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

–100

– 0.10

1.2

1.38

– 2 – 4

0.8
– 25

– 250
– 100

100

200

85
30

4.0 9.8

0.8 1.8

1.9 4.3

30
60
40
40

–2.2
–8.8

–5.5

200

9.0

Negligible

1.8

4.3

11
27

VGS= 0 ID= –1mA
Reference to 25°C
ID= –1mA
VGS= –10V ID= –1.4A
VGS= –10V ID= –2.2A
VDS= V

GS

ID= –250mA

VDS³

–15V IDS= –1.4A

VGS= 0 VDS= 0.8BV

DSS

TJ= 125°C
VGS= –20V
VGS= 20V

VGS= 0
VDS= –25V
f = 1MHz
VGS= –10V
ID= –2.2A
VDS= 0.5BV

DSS

VDD= –50V
ID= –2.2A
RG= 7.5

W

IS= –2.2A TJ= 25°C
VGS= 0
IF= –2.2A TJ= 25°C
di/ dt£

–100A/ms VDD£

–50V

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance

1

Gate Threshold Voltage
Forward Transconductance

1

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

2

Diode Forward Voltage

1

Reverse Recovery Time
Reverse Recovery Charge

1

Forward Turn–On Time

V

V/°C

W

V

S (É)

m

A

nA

pF

nC

ns

A

V

ns

m

C

nH

°C/W

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

L

D

L

S

R

q

JC

R

q

JPC

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width £300ms,

d £

2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(measured from 6mm down drain lead to centre of die)

Internal Source Inductance (from 6mm down source lead to source bond pad)

Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board

PACKAGE CHARACTERISTICS

THERMAL CHARACTERISTICS