Semelab Plc IRF9530-220M Datasheet

IRF9530-220M

Prelim. 7/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

MECHANICAL DATA

Dimensions in mm (inches)

TO–220M – Metal Package

P–CHANNEL

POWER MOSFET

FOR HI–REL

APPLICATIONS

FEATURES

• HERMETICALLY SEALED TO–220 METAL
PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

• SCREENING OPTIONS AVAILABLE

• ALL LEADS ISOLATED FROM CASE

Pad 1 – Gate Pad 2 – Drain Pad 3 – Source

V

DSS

-100V

I

D(cont)

-9.3A

R

DS(on)

0.31

WW

WW

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current @ T

case

= 25°C

I

D

Continuous Drain Current @ T

case

= 100°C

I

DM

Pulsed Drain Current

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

T

J

, T

stg

Operating and Storage Temperature Range

R

q

JC

Thermal Resistance Junction to Case

R

q

JA

Thermal Resistance Junction to Ambient

±20V

-9.3A

-5.8A

-37A
45W

0.36W/°C

–55 to 150°C

2.8°C/W max.
80°C/W max.

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

4.70

0.70

0.90

5.00

16.38

16.89

10.41

10.67

3.56

Dia.

3.81

13.39

13.64

10.41

10.92

123

12.70

19.05

0.89

1.14

2.54
BSC

2.65

2.75

IRF9530-220M

Prelim. 7/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= -5.8A
VGS= 10V ID= -9.3A
VDS= V

GS

ID= 250mA

VDS³

15V IDS= -5.8A

VGS= 0 VDS= 0.8BV

DSS

TJ= 125°C
VGS= 20V
VGS= –20V

VGS= 0
VDS= 25V
f = 1MHz
VGS= 10V ID= -9.3A
VDS= 0.5BV

DSS

ID= -9.3A
VDS= 0.5BV

DSS

VDD= -50V
I

D

= -9.3A

RG= 7.5

W

IS= -9.3A TJ= 25°C
V

GS

= 0

I

S

= -9.3A TJ= 25°C

di/ dt£

100A/msVDD£

50V

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge
Gate – Source Charge

Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge

-100

-0.1

0.31

0.36

-2 -4

2.5

-25

-250

-100
100

800
350
125

14.7 30

17.1
221

60
140
140
140

-9.3

-37

-4.7
250

3

8.7

8.7

V

V/°C

W

V

S(

W

m

A

nA

pF

nC

nC

ns

A

V

ns

m

C

nH

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

L

D

L

S

STATIC ELECTRICAL RATINGS

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(from 6mm down drain lead pad to centre of die)

Internal Source Inductance (from 6mm down source lead to centre of source bond pad)

PACKAGE CHARACTERISTICS

(W)