Semelab Plc IRF9240SMD Datasheet
IRF9240
IRF9240–SMD
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
V
DSS
Drain – Source Voltage
V
DGR
Drain – Gate Voltage (RGS= 20KW)
V
GS
Gate – Source Voltage
I
D
Continuous Drain Current @ T
case
= 25°C
@ T
case
= 100°C
I
DM
Pulsed Drain Current
P
D
Max. Power Dissipation @ T
case
= 25°C
Linear Derating Factor (TO 3 package only)
I
LM
Inductive Current , Clamped
T
j
Operating Junction and
T
stg
Storage Temperature Range
–200V
–200V
±20V
–11A
–7.0A
–44A
125W
1W / °C
–44A
–55 to 150°C
MECHANICAL DATA
3.60 (0.142)
Max.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
0.89
(0.035)
min.
4.14 (0.163)
3.84 (0.151)
10.69 (0.421)
10.39 (0.409)
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
0.50 (0.020)
0.26 (0.010)
0.76
(0.030)
min.
13
2
P–CHANNEL
POWER MOSFET
TO–3 — TO–3 (TO–204AA) Metal Package
TO–220 SM — TO–220 Ceramic Surface Mount Package
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
Prelim. 7/00
D
G
S
(TO 3 package only)
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
0.97 (0.060)
1.10 (0.043)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
Pin 1 – Gate
SMD1
Pin 2 – Source Pin 3 – Drain
Pin 1 – Gate
TO–3 Package
Pin 2 – Source Pin 3 – Drain
FEATURES
• P–CHANNEL POWER MOSFET
• HIGH VOLTAGE
• INTEGRAL PROTECTION DIODE
• AVAILABLE IN TO-3 (TO-204AA) AND
CERAMIC SURFACE MOUNT PACKAGES
Note: IRFNxxxx also available with
pins 1 and 3 reversed.
IRF9240
IRF9240–SMD
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Characteristic Test Conditions Min. Typ. Max. Unit
–200
–2 –4
–100
100
–250
–1000
–11
0.35 0.5
46
1100 1300
375 450
150 250
70 90
55
15
20 30
10 15
12 18
812
5.0
12.5
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate – Source Leakage Current (forward)
Gate – Source Leakage Current (reverse)
Zero Gate Voltage Drain Current
On State Drain Current
1
Static Drain – Source On-State Resistance
Forward Transconductance
1
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Characteristic Min. Typ. Max. Unit
1.0
0.1
30
300
R
q
JC
R
q
CS
R
q
JA
T
L
Junction to Case
(TO-3 package only)
Case to Sink
(TO-3 package only)
Junction to Ambient
Max. Lead Temperature 0.063
” from case for 10 sec. (TO-3 package only)
°C/W
°C/W
°C/W
°C
THERMAL CHARACTERISTICS
Characteristic Test Conditions Min. Typ. Max. Unit
–11
–44
–4.6
270
2.0
I
S
I
SM
V
SD
t
rr
Q
rr
VGS= 0V , IS= – 11A
T
case
= 25°C
I
F
= –11A , dlF / dt = 100A/ms
T
j
= 150°C
I
F
= –11A , dlF / dt = 100A/ms
T
j
= 150°C
Continuous Source Current (Body Diode)
Pulsed Source Current1(Body Diode)
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
m
C
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
VGS= 0V , ID= –250mA
V
DS
= VGS, ID= –250mA
V
GS
= –20V
V
GS
= 20V
V
DS
= Max. Rating , VGS= 0V
V
DS
= 0.8 x Max. Rating
V
GS
= 0V , T
case
= 125°C
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= –10V
V
GS
= –10V , ID= –6A
V
DS
> I
D(ON)
x R
DS(ON)
Max
I
D
= –6A
V
GS
= 0V
V
DS
= –25V
f = 1MHz
V
GS
= –15V
I
D
= –22A
V
DS
= 0.8 x Max. Rating
VDD= 0.5 x BV
DSS
ID= –6A
Z
O
= 4.7
W
V
V
nA
nA
m
A
m
A
A
W
S
pF
nC
ns
nH
nH
1) Pulse Test: Pulse Width < 300mS , Duty Cycle £2%
2) Repetitive Rating: Pulse Width limited by maximum junction temperature.
ELECTRICAL RATINGS (T
case
= 25°C unless otherwise stated)
Prelim. 7/00
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