Semelab Plc IRF9230 Datasheet

MECHANICAL DATA

Dimensions in mm (inches)

39.95 (1.573)
max.

30.40 (1.197)

30.15 (1.187)

17.15 (0.675)

16.64 (0.655)

IRF9230

P–CHANNEL

POWER MOSFET

V

DSS

–200V

4.09 (0.161)

3.84 (0.151)
dia.

2 plcs.

1.78 (0.070)

1.52 (0.060)

1.09 (0.043)

0.97 (0.038)
dia.

2 plcs.

20.32 (0.800)

18.80 (0.740)
dia.

2

11.18 (0.440)

1

10.67 (0.420)

12.07 (0.475)

TO–3 Metal Package

Pin 1 – Gate Pin 2 – Source Case – Drain

ABSOLUTE MAXIMUM RATINGS (T

V

GS

I

D

I

D

I

DM

P

D

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery
TJ, T

stg

T

L

Gate – Source Voltage
Continuous Drain Current (VGS= 0 , T
Continuous Drain Current (VGS= 0 , T
Pulsed Drain Current
Power Dissipation @ T

1

case

= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

2

2

3

Operating and Storage Temperature Range
Lead Temperature 1.6mm (0.63”) from case for 10 sec.

max.

26.67 (1.050)

7.87 (0.310)

6.99 (0.275)

11.30 (0.445)

case

2

I

D(cont)

R

DS(on)

FEATURES

• HERMETICALLY SEALED TO–3 METAL
PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• SCREENING OPTIONS AVAILABLE

= 25°C unless otherwise stated)

= 25°C)

case

= 100°C)

case

–6.5A

ΩΩ

0.8

±20V

–6.5A

–4A

–28A

75W

0.6W/°C
66mJ

–6.5A

7.5mJ

–5V/ns

–55 to +150°C

300°C

Notes

1) Pulse Test: Pulse Width ≤ 300µs, δ≤2%

2) @ VDD= –50V , L ≥ 2.3mH , RG= 25Ω , Peak IL= –6.5A , Starting TJ= 25°C

3) @ ISD≤ –6.5A , di/dt ≤ –100A/µs , VDD≤ BV

, TJ≤ 150°C , Suggested RG= 7.5Ω

DSS

Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].

Prelim. 9/96

IRF9230

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise stated)

case

Parameter Test Conditions Min. Typ. Max. Unit

STATIC ELECTRICAL RATINGS

BV

∆BV

∆T

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Drain – Source Breakdown Voltage

DSS

Temperature Coefficient of

DSS

Breakdown Voltage

J

Static Drain – Source On–State
Resistance

1

Gate Threshold Voltage
Forward Transconductance

Zero Gate Voltage Drain Current
Forward Gate

Reverse Gate

– Source Leakage
– Source Leakage

1

VGS= 0 ID= –1mA
Reference to 25°C
ID= –1mA
VGS= 10V ID= –4A
VGS= 10V ID= –6.5A
VDS= V

GS

ID= –250mA
VDS≥ –15V IDS= –4A
VGS= 0 VDS= 0.8BV

TJ= 125°C
VGS= –20V
VGS= 20V

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

VGS= 0
VDS= –25V
f = 1MHz
VGS= –10V
ID= –6.5A
VDS= 0.5BV

VDD= –100V
ID= –6.5A
RG= 7.5Ω

DSS

SOURCE – DRAIN DIODE CHARACTERISTICS

I
I

V
t

Q
t

S
SM

SD

rr

rr

on

Continuous Source Current
Pulse Source Current

Diode Forward Voltage
Reverse Recovery Time

2

1

1

Reverse Recovery Charge
Forward Turn–On Time

IS= –6.5A TJ= 25°C
VGS= 0
IF= –6.5A TJ= 25°C
di/ dt≤ –100A/µsVDD≤ –50V

PACKAGE CHARACTERISTICS

L

D

L

S

Internal Drain Inductance (measured from 6mm down drain lead to centre of die)
Internal Source Inductance (from 6mm down source lead to source bond pad)

THERMAL CHARACTERISTICS

R
R
R

θJC
θCS
θJA

Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient

Notes

1) Pulse Test: Pulse Width ≤ 300ms, δ≤2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].

DSS

–200

–0.2

0.80

0.92

–2 –4

2

–25
–250
–100

100

V

V/°C

Ω

V

S (É)

µA

nA

700
200

pF

40

831

0.8 7.0

nC

5.0 17
50

100
100

ns

80

–6.5

–28

–6.0

400

4

A

V

ns

µC

Negligible

5.0
13

nH

1.67

0.12

°C/W

30

Prelim. 9/96