Semelab Plc IRF9140 Datasheet

MECHANICAL DATA

Dimensions in mm (inches)

39.95 (1.573)
max.

30.40 (1.197)

30.15 (1.187)

17.15 (0.675)

16.64 (0.655)

IRF9140

P–CHANNEL

POWER MOSFET

V

DSS

–100V

4.09 (0.161)

3.84 (0.151)
dia.

2 plcs.

1.78 (0.070)

1.52 (0.060)

1.09 (0.043)

0.97 (0.038)
dia.

2 plcs.

20.32 (0.800)

18.80 (0.740)
dia.

2

11.18 (0.440)

1

10.67 (0.420)

12.07 (0.475)

TO–3 Metal Package

Pin 1 – Gate Pin 2 – Source Case – Drain

ABSOLUTE MAXIMUM RATINGS (T

V

GS

I

D

I

D

I

DM

P

D

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery
TJ, T

stg

T

L

Gate – Source Voltage
Continuous Drain Current (VGS= 0 , T
Continuous Drain Current (VGS= 0 , T
Pulsed Drain Current
Power Dissipation @ T

1

case

= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

2

2

3

Operating and Storage Temperature Range
Lead Temperature 1.6mm (0.63”) from case for 10 sec.

max.

26.67 (1.050)

7.87 (0.310)

6.99 (0.275)

11.30 (0.445)

case

2

I

D(cont)

R

DS(on)

FEATURES

• HERMETICALLY SEALED TO–3 METAL
PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• SCREENING OPTIONS AVAILABLE

= 25°C unless otherwise stated)

= 25°C)

case

= 100°C)

case

–18A

ΩΩ

0.2

±20V
–18A
–11A
–72A

125W
1W/°C
500mJ

–18A

12.5mJ

–5.5V/ns

–55 to +150°C

300°C

Notes

1) Pulse Test: Pulse Width ≤ 300µs, δ≤2%

2) @ VDD= –25V , L ≥ 2.3mH , RG= 25Ω , Peak IL= –18A , Starting TJ= 25°C

3) @ ISD≤ –18A , di/dt ≤ –100A/µs , VDD≤ BV

, TJ≤ 150°C , Suggested RG= 9.1Ω

DSS

Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].

Prelim. 9/96

IRF9140

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise stated)

case

Parameter Test Conditions Min. Typ. Max. Unit

STATIC ELECTRICAL RATINGS

BV

∆BV

∆T

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Drain – Source Breakdown Voltage

DSS

Temperature Coefficient of

DSS

Breakdown Voltage

J

Static Drain – Source On–State
Resistance

1

Gate Threshold Voltage
Forward Transconductance

Zero Gate Voltage Drain Current
Forward Gate

Reverse Gate

– Source Leakage
– Source Leakage

1

VGS= 0 ID= –1mA
Reference to 25°C
ID= –1mA
VGS= 10V ID= –11A
VGS= 10V ID= –18A
VDS= V

GS

ID= –250mA
VDS≥ –15V IDS= –11A
VGS= 0 VDS= 0.8BV

TJ= 125°C
VGS= –20V
VGS= 20V

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

VGS= 0
VDS= –25V
f = 1MHz
VGS= –10V
ID= –18A
VDS= 0.5BV

VDD= –50V
ID= –18A
RG= 9.1Ω

DSS

SOURCE – DRAIN DIODE CHARACTERISTICS

I
I

V
t

Q
t

S
SM

SD

rr

rr

on

Continuous Source Current
Pulse Source Current

Diode Forward Voltage
Reverse Recovery Time

2

1

1

Reverse Recovery Charge
Forward Turn–On Time

IS= –18A TJ= 25°C
VGS= 0
IF= –18A TJ= 25°C
di/ dt≤ –100A/µsVDD≤ –50V

PACKAGE CHARACTERISTICS

L

D

L

S

Internal Drain Inductance (measured from 6mm down drain lead to centre of die)
Internal Source Inductance (from 6mm down source lead to source bond pad)

THERMAL CHARACTERISTICS

R
R
R

θJC
θCS
θJA

Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient

Notes

1) Pulse Test: Pulse Width ≤ 300ms, δ≤2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].

DSS

–100

–0.087

0.2

0.23

–2 –4

6.2
–25

–250
–100

100

1400

600
200

31 60

3.7 13

7.0 35.2

–18
–72

–4.2

170 280

3.6

Negligible

5.0
13

1.0

0.12

35
85
85
65

30

Prelim. 9/96

V

V/°C

Ω

V

S (É)

µA

nA

pF

nC

ns

A

V

ns

µC

nH

°C/W